MPSW01 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSW01
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 30 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 20 pF
Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TO92
Búsqueda de reemplazo de transistor bipolar MPSW01
MPSW01 Datasheet (PDF)
mpsw01.pdf
MPSW01NPN General Purpose AmplifierFeatures This device is designed for general purpose medium power amplifiers Sourced from process 37 Absolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO Collector-Base Voltage 40 VVEBO Emitter-Base Voltage 5.0 VIC Collector Current - Continuous 1.0 APD Tota
mpsw01rev0d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSW01/DOne Watt High Current TransistorsMPSW01NPN Silicon*MPSW01ACOLLECTOR3*Motorola Preferred Device2BASE1EMITTERMAXIMUM RATINGSRating Symbol Value Unit12CollectorEmitter Voltage VCEO Vdc 3MPSW01 30MPSW01A 40CASE 2905, STYLE 1TO92 (TO226AE)CollectorBase Voltage VCBO Vdc
mpsw01-a.pdf
MPSW01, MPSW01AOne Watt High CurrentTransistorsNPN SiliconFeatures http://onsemi.com Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1MPSW01 30EMITTERMPSW01A 40Collector-Base Voltage VCBO VdcMPSW01 40MPSW01A 50Emitter-Base Voltage VEBO 5.0 VdcCollector Current - Continuous IC 1000
mpsw05 mpsw06.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSW05/DOne Watt Amplifier TransistorsMPSW05NPN Silicon*MPSW06*Motorola Preferred DeviceCOLLECTOR32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol MPSW05 MPSW06 UnitCASE 2905, STYLE 1CollectorEmitter Voltage VCEO 60 80 VdcTO92 (TO226AE)CollectorBase Voltage VCBO 60 80 VdcEmitte
mpsw06.pdf
Discrete POWER & SignalTechnologiesMPSW06TO-226CBENPN General Purpose AmplifierThis device is designed for general purpose amplifier applicationsat collector currents to 300 mA. Sourced from Process 33. SeeMPSA06 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector
mpsw05 mpsw06.pdf
MPSW05, MPSW06One Watt AmplifierTransistorsNPN Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value Unit1EMITTERCollector-Emitter Voltage MPSW05 VCEO 60 VdcMPSW06 80Collector-Base Voltage MPSW05 VCBO 60 VdcMPSW06 80Emitter-Base Voltage VEBO 4.0 VdcCollector Current - Continuous IC 500 mAdc TO
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
