MPSW05 Todos los transistores

 

MPSW05 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPSW05
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 60 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 50 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO92
 

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MPSW05 datasheet

 ..1. Size:138K  motorola
mpsw05 mpsw06.pdf pdf_icon

MPSW05

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW05/D One Watt Amplifier Transistors MPSW05 NPN Silicon * MPSW06 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol MPSW05 MPSW06 Unit CASE 29 05, STYLE 1 Collector Emitter Voltage VCEO 60 80 Vdc TO 92 (TO 226AE) Collector Base Voltage VCBO 60 80 Vdc Emitte

 ..2. Size:96K  onsemi
mpsw05 mpsw06.pdf pdf_icon

MPSW05

MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit 1 EMITTER Collector-Emitter Voltage MPSW05 VCEO 60 Vdc MPSW06 80 Collector-Base Voltage MPSW05 VCBO 60 Vdc MPSW06 80 Emitter-Base Voltage VEBO 4.0 Vdc Collector Current - Continuous IC 500 mAdc TO

 9.1. Size:89K  motorola
mpsw01rev0d.pdf pdf_icon

MPSW05

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW01/D One Watt High Current Transistors MPSW01 NPN Silicon * MPSW01A COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emitter Voltage VCEO Vdc 3 MPSW01 30 MPSW01A 40 CASE 29 05, STYLE 1 TO 92 (TO 226AE) Collector Base Voltage VCBO Vdc

 9.2. Size:23K  fairchild semi
mpsw06.pdf pdf_icon

MPSW05

Discrete POWER & Signal Technologies MPSW06 TO-226 C B E NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. See MPSA06 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector

Otros transistores... MPSU52 , MPSU55 , MPSU56 , MPSU57 , MPSU60 , MPSU95 , MPSW01 , MPSW01A , TIP31C , MPSW06 , MPSW07 , MPSW10 , MPSW13 , MPSW14 , MPSW42 , MPSW43 , MPSW45 .

 

 

 


 
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