MPSW05 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSW05
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 1 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 4 V
Corriente del colector DC máxima (Ic): 0.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 50 MHz
Capacitancia de salida (Cc): 12 pF
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta: TO92
Búsqueda de reemplazo de MPSW05
MPSW05 datasheet
mpsw05 mpsw06.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW05/D One Watt Amplifier Transistors MPSW05 NPN Silicon * MPSW06 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 MAXIMUM RATINGS 2 3 Rating Symbol MPSW05 MPSW06 Unit CASE 29 05, STYLE 1 Collector Emitter Voltage VCEO 60 80 Vdc TO 92 (TO 226AE) Collector Base Voltage VCBO 60 80 Vdc Emitte
mpsw05 mpsw06.pdf
MPSW05, MPSW06 One Watt Amplifier Transistors NPN Silicon http //onsemi.com Features Pb-Free Packages are Available* COLLECTOR 3 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit 1 EMITTER Collector-Emitter Voltage MPSW05 VCEO 60 Vdc MPSW06 80 Collector-Base Voltage MPSW05 VCBO 60 Vdc MPSW06 80 Emitter-Base Voltage VEBO 4.0 Vdc Collector Current - Continuous IC 500 mAdc TO
mpsw01rev0d.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MPSW01/D One Watt High Current Transistors MPSW01 NPN Silicon * MPSW01A COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit 1 2 Collector Emitter Voltage VCEO Vdc 3 MPSW01 30 MPSW01A 40 CASE 29 05, STYLE 1 TO 92 (TO 226AE) Collector Base Voltage VCBO Vdc
mpsw06.pdf
Discrete POWER & Signal Technologies MPSW06 TO-226 C B E NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. See MPSA06 for characteristics. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 80 V VCBO Collector
Otros transistores... MPSU52 , MPSU55 , MPSU56 , MPSU57 , MPSU60 , MPSU95 , MPSW01 , MPSW01A , TIP31C , MPSW06 , MPSW07 , MPSW10 , MPSW13 , MPSW14 , MPSW42 , MPSW43 , MPSW45 .
History: 2SB825 | 3N105
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
2sc2240 transistor | c3198 | 2sc793 | 2sd313 replacement | 2n4249 | a1013 transistor | 2sc2705 | bc239






