MPSW57 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MPSW57
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 0.25 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 50 MHz
   Ganancia de corriente contínua (hfe): 80
   Paquete / Cubierta: TO92

Búsqueda de reemplazo de transistor bipolar MPSW57

MPSW57 Datasheet (PDF)

9.1. Size:123K motorola
mpsw51re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSW51/DOne Watt High Current TransistorsPNP Silicon MPSW51COLLECTOR3MPSW51A**Motorola Preferred Device2BASE1EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage MPSW51 VCEO 30 Vdc 12MPSW51A 403CollectorBase Voltage MPSW51 VCBO 40 VdcCASE 2905, STYLE 1MPSW51A

9.2. Size:141K motorola
mpsw55 mpsw56.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSW55/DOne Watt Amplifier TransistorsMPSW55PNP Silicon*MPSW56COLLECTOR*Motorola Preferred Device32BASE1EMITTER1MAXIMUM RATINGS23Rating Symbol MPSW55 MPSW56 UnitCASE 2905, STYLE 1CollectorEmitter Voltage VCEO 60 80 VdcTO92 (TO226AE)CollectorBase Voltage VCBO 60 80

9.3. Size:44K fairchild semi
mpsw56.pdf

MPSW56TO-226CBEPNP General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switches requiring collector currents to 800 mA.Sourced from Process 79.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 80 VVCBO Collector-Base Voltage 80 VVEBO Emitter-Base Voltage 4.0

9.4. Size:103K onsemi
mpsw51ag.pdf

MPSW51, MPSW51AOne Watt High CurrentTransistorsPNP SiliconFeatures http://onsemi.com These Devices are Pb-Free and are RoHS Compliant*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1MPSW51 -30EMITTERMPSW51A -40Collector-Base Voltage VCBO VdcMPSW51 -40MPSW51A -50Emitter-Base Voltage VEBO -5.0 VdcCollector Curre

9.5. Size:103K onsemi
mpsw51arlrpg.pdf

9.6. Size:103K onsemi
mpsw51g.pdf

9.7. Size:97K onsemi
mpsw55 mpsw56.pdf

MPSW55, MPSW56One Watt AmplifierTransistorsPNP Siliconhttp://onsemi.comFeatures Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value Unit1EMITTERCollector-Emitter Voltage MPSW55 VCEO -60 VdcMPSW56 -80Collector-Base Voltage MPSW55 VCBO -60 VdcMPSW56 -80Emitter-Base Voltage VEBO -4.0 VdcCollector Current - Continuous IC -500 m

9.8. Size:103K onsemi
mpsw51arlrag.pdf

9.9. Size:96K onsemi
mpsw51-a.pdf

MPSW51, MPSW51AOne Watt High CurrentTransistorsPNP SiliconFeatures http://onsemi.com Pb-Free Packages are Available*COLLECTOR32MAXIMUM RATINGSBASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc1MPSW51 -30EMITTERMPSW51A -40Collector-Base Voltage VCBO VdcMPSW51 -40MPSW51A -50Emitter-Base Voltage VEBO -5.0 VdcCollector Current - Continuous IC

Otros transistores... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .

History: TP4890

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D