MRA1000-7 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MRA1000-7
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 7 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 28 V
Tensión emisor-base (Veb): 3.5 V
Corriente del colector DC máxima (Ic): 0.02 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1000 MHz
Capacitancia de salida (Cc): 50 pF
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO128
Búsqueda de reemplazo de MRA1000-7
MRA1000-7 Datasheet (PDF)
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MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRA10007L/DThe RF LineUHF Power TransistorMRA1000-7L. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics:Output Power 7.0 Watts9.0 dB, TO 1000 MHzPower Gain 9.
mra1000-3 5lrev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRA10003.5L/DThe RF LineUHF Power TransistorMRA1000-3.5LDesigned primarily for wideband, largesignal output and driver amplifierstages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics:Output Power 3.5 Watts10 dB, 1000 MHzPower Gain 10 dB, S
mra1000-14lrev6d.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRA100014L/DThe RF LineUHF Power TransistorMRA1000-14L. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics:Output Power 14 Watts8.0 dB, TO 1000 MHzPower Gain 8
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , BC546 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: MRF410
History: MRF410



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