MRA1000-7 Datasheet. Specs and Replacement
Type Designator: MRA1000-7
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO128
MRA1000-7 Substitution
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MRA1000-7 datasheet
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRA1000 7L/D The RF Line UHF Power Transistor MRA1000-7L . . . designed primarily for wideband, large signal output and driver amplifier stages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics Output Power 7.0 Watts 9.0 dB, TO 1000 MHz Power Gain 9.... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRA1000 3.5L/D The RF Line UHF Power Transistor MRA1000-3.5L Designed primarily for wideband, large signal output and driver amplifier stages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics Output Power 3.5 Watts 10 dB, 1000 MHz Power Gain 10 dB, S... See More ⇒
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRA1000 14L/D The RF Line UHF Power Transistor MRA1000-14L . . . designed primarily for wideband, large signal output and driver amplifier stages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics Output Power 14 Watts 8.0 dB, TO 1000 MHz Power Gain 8... See More ⇒
Detailed specifications: MQ5858, MQ5910, MQ6076, MQ918, MQ918R, MQ930, MQ930R, MRA1000-14L, 2SB817, MRF2001, MRF2001B, MRF2005, MRF2005B, MRF2010, MRF2010B, MRF207, MRF208
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