MRA1000-7 Datasheet, Equivalent, Cross Reference Search
Type Designator: MRA1000-7
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 7 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 28 V
Maximum Emitter-Base Voltage |Veb|: 3.5 V
Maximum Collector Current |Ic max|: 0.02 A
Max. Operating Junction Temperature (Tj): 200 °C
Transition Frequency (ft): 1000 MHz
Collector Capacitance (Cc): 50 pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO128
MRA1000-7 Transistor Equivalent Substitute - Cross-Reference Search
MRA1000-7 Datasheet (PDF)
mra1000-7lrev6d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRA10007L/DThe RF LineUHF Power TransistorMRA1000-7L. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics:Output Power 7.0 Watts9.0 dB, TO 1000 MHzPower Gain 9.
mra1000-3 5lrev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRA10003.5L/DThe RF LineUHF Power TransistorMRA1000-3.5LDesigned primarily for wideband, largesignal output and driver amplifierstages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics:Output Power 3.5 Watts10 dB, 1000 MHzPower Gain 10 dB, S
mra1000-14lrev6d.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRA100014L/DThe RF LineUHF Power TransistorMRA1000-14L. . . designed primarily for wideband, largesignal output and driver amplifierstages to 1000 MHz. Designed for Class A Linear Power Amplifiers Specified 19 Volt, 1000 MHz Characteristics:Output Power 14 Watts8.0 dB, TO 1000 MHzPower Gain 8
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
