MRF2001B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MRF2001B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 7 W
   Tensión colector-base (Vcb): 45 V
   Corriente del colector DC máxima (Ic): 0.25 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Paquete / Cubierta: X82D

Búsqueda de reemplazo de transistor bipolar MRF2001B

MRF2001B Datasheet (PDF)

8.1. Size:111K motorola
mrf2000-5l.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20005L/DThe RF LineMicrowave LinearMRF2000-5LPower TransistorDesigned primarily for wideband, large signal output and driver amplifierstages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

8.2. Size:111K motorola
mrf2000-.pdf

8.3. Size:109K motorola
mrf20060 mrf20060s.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20060/DThe RF SubMicron Bipolar LineRF Power Bipolar TransistorsMRF20060The MRF20060 and MRF20060S are designed for broadband commercialMRF20060Sand industrial applications at frequencies from 1800 to 2000 MHz. The highgain, excellent linearity and broadband performance of these devices makethem ideal for larg

8.4. Size:109K motorola
mrf20060rev0m.pdf

8.5. Size:111K motorola
mrf20030rev1.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF20030/DThe RF SubMicron Bipolar LineMRF20030RF Power Bipolar TransistorDesigned for broadband commercial and industrial applications at frequen-cies from 1800 to 2000 MHz. The high gain and broadband performance of thisdevice makes it ideal for largesignal, commonemitter class A and class AB30 W, 2.0 GHz

8.6. Size:111K motorola
mrf20030.pdf