All Transistors. MRF2001B Datasheet

 

MRF2001B Datasheet, Equivalent, Cross Reference Search

Type Designator: MRF2001B

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 7 W

Maximum Collector-Base Voltage |Vcb|: 45 V

Maximum Collector Current |Ic max|: 0.25 A

Max. Operating Junction Temperature (Tj): 175 °C

Noise Figure, dB: -

Package: X82D

MRF2001B Transistor Equivalent Substitute - Cross-Reference Search

 

MRF2001B Datasheet (PDF)

4.1. mrf20030rev1.pdf Size:111K _motorola

MRF2001B
MRF2001B

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20030/D The RF SubMicron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for largesignal, commonemitter class A and class AB 30 W, 2.0 GHz amplifier

4.2. mrf2000-.pdf Size:111K _motorola

MRF2001B
MRF2001B

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20005L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.08.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Power Gain U

 4.3. mrf20060rev0m.pdf Size:109K _motorola

MRF2001B
MRF2001B

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20060/D The RF SubMicron Bipolar Line RF Power Bipolar Transistors MRF20060 The MRF20060 and MRF20060S are designed for broadband commercial MRF20060S and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for largesig

Datasheet: 2SC628 , 2SC629 , 2SC63 , 2SC631 , 2SC631A , 2SC631AS , 2SC632 , 2SC632A , BC547C , 2SC633A , 2SC634 , 2SC634A , 2SC635 , 2SC636 , 2SC637 , 2SC638 , 2SC639 .

 

 
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