MRF2005B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF2000 5L/D The RF Line Microwave Linear MRF2000-5L Power Transistor Designed primarily for wideband, large signal output and driver amplifier stages in the 1.0 to 2.0 GHz frequency range. Designed for Class A or AB, Common Emitter Power Amplifiers 7.0 8.0 dB GAIN Specified 20 Volt, 2.0 GHz Characteristic Powe

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20060/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistors MRF20060 The MRF20060 and MRF20060S are designed for broadband commercial MRF20060S and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for larg

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20060/D The RF Sub Micron Bipolar Line RF Power Bipolar Transistors MRF20060 The MRF20060 and MRF20060S are designed for broadband commercial MRF20060S and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of these devices make them ideal for larg

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20030/D The RF Sub Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common emitter class A and class AB 30 W, 2.0 GHz

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF20030/D The RF Sub Micron Bipolar Line MRF20030 RF Power Bipolar Transistor Designed for broadband commercial and industrial applications at frequen- cies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large signal, common emitter class A and class AB 30 W, 2.0 GHz