2N4896 Todos los transistores

 

2N4896 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4896

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 7 W

Tensión colector-base (Vcb): 120 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 6 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 80 MHz

Capacitancia de salida (Cc): 80 pF

Ganancia de corriente contínua (hfe): 100

Empaquetado / Estuche: TO39

Búsqueda de reemplazo de transistor bipolar 2N4896

 

2N4896 Datasheet (PDF)

1.1. 2n4896.pdf Size:11K _semelab

2N4896

2N4896 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

5.1. 2n4898-99 2n4900.pdf Size:180K _mospec

2N4896
2N4896

A A A A

5.2. 2n4899x.pdf Size:14K _semelab

2N4896
2N4896

2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO–66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.

 5.3. 2n4895.pdf Size:11K _semelab

2N4896

2N4895 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 60V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

5.4. 2n4898x.pdf Size:14K _semelab

2N4896
2N4896

2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO–66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.

 5.5. 2n4897.pdf Size:11K _semelab

2N4896

2N4897 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

5.6. 2n4897x.pdf Size:10K _semelab

2N4896

2N4897X Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 80V dia. IC = 5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

5.7. 2n4898 2n4899 2n4900.pdf Size:50K _jmnic

2N4896
2N4896

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION · ·With TO-66 package ·Low collector-emitter saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi

5.8. 2n4898 2n4899 2n4900.pdf Size:126K _inchange_semiconductor

2N4896
2N4896

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION · ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi

Otros transistores... 2N4878 , 2N4879 , 2N4880 , 2N4888 , 2N4889 , 2N4890 , 2N4890S , 2N4895 , MJE13005 , 2N4897 , 2N4898 , 2N4899 , 2N49 , 2N4900 , 2N4901 , 2N4901SM , 2N4902 .

 

 
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