MRF450 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MRF450
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 115 W
   Tensión colector-base (Vcb): 40 V
   Tensión colector-emisor (Vce): 20 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 7.5 A
   Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: M174

Búsqueda de reemplazo de transistor bipolar MRF450

MRF450 Datasheet (PDF)

0.1. Size:1290K hgsemi
mrf450a.pdf

HG RF POWER TRANSISTORMRF450ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORMRF450ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 19

9.1. Size:70K motorola
mrf454re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF454/DThe RF LineNPN SiliconMRF454RF Power TransistorDesigned for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 80 Watts80 W, 30 MHzMinimum Gain = 12 dBRF POWEREfficiency = 50%TRANSISTORNPN S

9.2. Size:75K motorola
mrf455re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF455/DThe RF LineNPN SiliconMRF455RF Power Transistor. . . designed for power amplifier applications in industrial, commercial andamateur radio equipment to 30 MHz. Specified 12.5 Volt, 30 MHz Characteristics Output Power = 60 Watts60 W, 30 MHzMinimum Gain = 13 dBRF POWEREfficiency = 55%TRANSISTOR

9.3. Size:57K motorola
mrf454rev1.pdf

9.4. Size:75K motorola
mrf455.pdf

9.5. Size:70K motorola
mrf454.pdf

9.6. Size:135K macom
mrf455.pdf

MRF455 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 05202009 60W, 30MHz, 12.5V Product Image Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30 MHz. Specified 12.5 V, 30 MHz characteristics Output power = 60 W Minimum gain = 13 dB Efficiency = 55% CASE 21107, STYLE 1 1 ADVAN

9.7. Size:114K macom
mrf454.pdf

MRF454 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 80W, 30MHz, 12.5V Designed for power amplifier applications in industrial, commercial and Product Image amateur radio equipment to 30 MHz. Specified 12.5 V, 30 MHz characteristics Output power = 80 W Minimum gain = 12 dB Efficiency = 50% CASE 21111, STYLE 1 1 ADV

9.8. Size:447K hgsemi
mrf453a.pdf

HG RF POWER TRANSISTORMRF453ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 1998www.HGSemi.comHG RF POWER TRANSISTORMRF453ASemiconductorsHGROHS Compliance,Silicon NPN POWER TRANSISTORNote : Above parameters , ratings , limits and conditions are subject to change.Sep. 19

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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