2N49 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby 2N4918/DSEMICONDUCTOR TECHNICAL DATA2N4918Medium-Power Plastic PNPthruSilicon Transistors*2N4920. . . designed for driver circuits, switching, and amplifier applications. Thesehighperformance plastic devices feature:*Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp3 AMPERE Excellent

Order this documentMOTOROLAby 2N4921/DSEMICONDUCTOR TECHNICAL DATA2N4921Medium-Power Plastic NPNthruSilicon Transistors2N4923*. . . designed for driver circuits, switching, and amplifier applications. Thesehighperformance plastic devices feature:*Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp1 AMPERE Excellent

2N4953NPN General Purpose Amplifier This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. Sourced from Process 10.TO-9211. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25C unless otherwise noted Symbol Parameter Value UnitsVCEO Collector-Emitter Voltage 30 VVCBO C

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145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

ON Semiconductor)2N4918Medium-Power Plastic PNPthruSilicon Transistors*2N4920. . . designed for driver circuits, switching, and amplifier*ON Semiconductor Preferred Deviceapplications. These highperformance plastic devices feature:3 AMPERE Low Saturation Voltage GENERALPURPOSEVCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 AmpPOWER TRANSISTORS4080 VOLTS Exc

2N4918 - 2N4920* SeriesPreferred Device Medium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Pb-Free Package is Available**3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis

2N4918 - 2N4920 SeriesMedium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation, PD = 30 W @ TC = 25_C3.0 A, 40-80 V, 30 W Excellent Safe Oper

2N4918 - 2N4920* SeriesPreferred Device Medium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Pb-Free Package is Available**3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis

2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30

2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30

2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30

2N4918 - 2N4920* SeriesPreferred Device Medium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Pb-Free Package is Available**3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis

2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30

2N4921G, 2N4922G,2N4923GMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.www.onsemi.comFeatures1.0 AMPERE Low Saturation VoltageGENERAL PURPOSE Excellent Power DissipationPOWER TRANSISTORS Excellent Safe Operating Area40-80 VOLTS, 30 WATTS Complement

PNP SILICON TRANSISTORS, PNP SILICON TRANSISTORS, EPITAXIAL BASE EPITAXIAL BASE LF Large signal power amplification Switching medium current ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit2N4901 -40 VCBO Collector to Base Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCEO #Collector-Emitter Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCER Collector-Emitter Voltage 2

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"2N4938DCSM"2N4939DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 40V CEO6.22 0.13 A = 1.2

2N4928CSMGENERAL PURPOSE TRANSISTOR IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEMECHANICAL DATAFOR HIGH RELIABILITY APPLICATIONSDimensions in mm (inches)0.51 0.10FEATURES(0.02 0.004) 0.31rad.(0.012) SILICON PNP TRANSISTOR3 HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE) CECC SCREENING OPTIONS21 SPACE QUALITY LEVELS OPTIONS

2N4908Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 60V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

2N4901SMDDimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar PNP Device. 2VCEO = 40V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

2N4910XSMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 40V IC = 4A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her

2N4925Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 150V dia.IC = 0.2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

2N4911XSMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her

2N4910X2N4911X2N4912XMECHANICAL DATANPN EPITAXIALDimensions in mm (inches)POWER TRANSISTOR IN TO66 HERMETIC PACKAGE6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONS SCREENING OPTIONS AVAILABE1 2 TO66 PACKAGE1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.TO66 Metal Package.PIN 1 =

2N4928DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 100V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.

2N4909Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

2N4898X2N4899X2N4900XMECHANICAL DATADimensions in mm (inches)PNP EPITAXIAL BASEMEDIUM POWERTRANSISTOR6.35 (0.250)8.64 (0.340)3.68(0.145) rad.3.61 (0.142)max.3.86 (0.145)rad.APPLICATIONSMedium power, low frequency PNPbipolar transistor in a hermeticallysealed TO66 metal package.1.27 (0.050)1.91 (0.750)4.83 (0.190)5.33 (0.210)9.14 (0.360)min.

2N4910XSMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 40V IC = 4A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

2N4924Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 100V dia.IC = 0.2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1

2N4907Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar PNP Device. 3VCEO = 40V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

2N4911XSMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR 2N4923TO-126ECBGeneral Purpose Power TransistorABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)DESCRIPTION VALUE UNITCollector -Base Voltage VCBO 80 VCollector -Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5.0 VCollector Current Continuous IC 3.0 ABas

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921,2N4922 2N4923 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918,2N4919 2N4920 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067,2N5068,2N5069 Low collector-emitter saturation voltage APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) an

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFi

TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level JAN, JANTX 2N3743 2N4930 2N4931 JANTXV MAXIMUM RATINGS Ratings Sym 2N3743 2N4930 2N4931 Unit Collector-Emitter Voltage 300 200 250 Vdc VCEO Collector-Base Voltage 300 200 250 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 200 mAdc IC Total

2N4991 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width) 1 P Power dissipation, mW 300

2N4992 Silicon bilateral switch (SBS) in package TO-92 0.45max0.7max15.2 2.5214.51.6 5.2 34.2Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width) 1 P Power dissipation, mW 300 Electri

2N4993 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width) 1 P Power dissipation, mW 300

2N4987 Silicon unilateral switch (SUS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Parameter, units Limits Vrrm Peak reverse voltage, V -30 IT(rms) DC forward anode current, mA 175 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width)

2N4988 Silicon unilateral switch (SUS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Parameter, units Limits Vrrm Peak reverse voltage, V -30 IT(rms) DC forward anode current, mA 175 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width)

2N4990 Silicon unilateral switch (SUS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Parameter, units Limits Vrrm Peak reverse voltage, V -30 IT(rms) DC forward anode current, mA 175 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10sec pulse width)

Data Sheet No. 2N4957Generic Part Number:Type 2N49572N4957Geometry 0006Polarity PNPREF: MIL-PRF-19500/426Qual Level: JAN - JANSFeatures: Small signal RF silicon transistordesigned for high-gain, low-noiseapplications. Housed in a TO-72 case. Also available in chip form usingthe 0006 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/426

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N4922DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector Saturatioin Voltage-: V = 0.6V(Max.)@ I = 1ACE(sat) CWide Area of Safe OperationComplement to Type 2N4919Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for d

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921/4922/4923 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4915 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- : hFE= 25-100 @IC= 2.5A Complement to Type 2N4906 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4912 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation Complement to Type 2N4900 APPLICATIONS Designed for driver circuits, switching and amplifier applications.

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N4918 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A Wide Area of Safe Operation Complement to Type 2N4921 APPLICATIONS Designed for driver circuits, switching and amplifier application

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4908 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCB

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4904 2N4905 2N4906 DESCRIPTION With TO-3 package Complement to type 2N4913/4914/4915 Low collector saturation voltage APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 Coll

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4910 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4902 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- : hFE= 20-80 @IC= -1A Complement to Type 2N5068 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4914 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- : hFE= 25-100 @IC= 2.5A Complement to Type 2N4905 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4913 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A DC Current Gain- : hFE= 25-100 @IC= 2.5A Complement to Type 2N4904 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918/4919/4920 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4909 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCB

isc Silicon NPN Power Transistor 2N4923DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = 0.6V(Max.)@ I = 1ACE(sat) CWide Area of Safe OperationComplement to Type 2N4920Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver circuits, switching

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4903 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- : hFE= 20-80 @IC= -1A Complement to Type 2N5069 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMB

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4906 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- : hFE= 25-100 @IC= -2.5A Complement to Type 2N4915 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) S

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067/5068/5069 Low collector saturation voltage APPLICATIONS For generalpurpose switching and power amplifier applications. PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 Coll

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4904 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- : hFE= 25-100 @IC= -2.5A Complement to Type 2N4913 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) S

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4907 DESCRIPTION Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCB

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplifi

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4911 DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A Wide Area of Safe Operation APPLICATIONS Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=