2N49 Todos los transistores

 

2N49 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N49

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 35 V

Corriente del colector DC máxima (Ic): 0.02 A

Temperatura operativa máxima (Tj): 50 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 0.8 MHz

Ganancia de corriente contínua (hfe): 39

Empaquetado / Estuche: TO28

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2N49 Datasheet (PDF)

1.1. 2n373 2n374 2n456 2n457 2n497 2n544 2n561 2n578 2n579 2n580.pdf Size:317K _rca

2N49



1.2. 2n4921 2n4922 2n4923.pdf Size:238K _motorola

2N49
2N49

Order this document MOTOROLA by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 Medium-Power Plastic NPN thru Silicon Transistors 2N4923 * . . . designed for driver circuits, switching, and am

 1.3. 2n4948-49.pdf Size:70K _motorola

2N49
2N49

1.4. 2n4918 2n4919 2n4920.pdf Size:254K _motorola

2N49
2N49

Order this document MOTOROLA by 2N4918/D SEMICONDUCTOR TECHNICAL DATA 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and am

 1.5. 2n4953.pdf Size:60K _fairchild_semi

2N49
2N49

2N4953 NPN General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 500mA. • Sourced from Process 10. TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 30 V VCBO C

1.6. 2n4960 2n4961 2n4962 2n4963.pdf Size:82K _central

2N49

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.7. 2n4918 2n4919 2n4920 2.pdf Size:63K _central

2N49

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.8. 2n4928 2n4929 2n4930 2n4931.pdf Size:58K _central

2N49
2N49

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.9. 2n4904 2n4905 2n4906 2n4913 2n4914 2n4915.pdf Size:63K _central

2N49

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.10. 2n4921 2n4922 2n4923.pdf Size:90K _onsemi

2N49
2N49

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

1.11. 2n4921g.pdf Size:91K _onsemi

2N49
2N49

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

1.12. 2n4919g.pdf Size:117K _onsemi

2N49
2N49

2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http://onsemi.com Features • Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dis

1.13. 2n4922g.pdf Size:91K _onsemi

2N49
2N49

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

1.14. 2n4918g.pdf Size:117K _onsemi

2N49
2N49

2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http://onsemi.com Features • Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dis

1.15. 2n4918 2n4919 2n4920.pdf Size:113K _onsemi

2N49
2N49

ON Semiconductor) 2N4918 Medium-Power Plastic PNP thru Silicon Transistors * 2N4920 . . . designed for driver circuits, switching, and amplifier *ON Semiconductor Preferred Device applications. These high–performance plastic devices feature: 3 AMPERE • Low Saturation Voltage — GENERAL–PURPOSE VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp POWER TRANSISTORS 40–80 VOLTS • Exc

1.16. 2n4920g9285.pdf Size:117K _onsemi

2N49
2N49

2N4918 - 2N4920* Series Preferred Device Medium-Power Plastic PNP Silicon Transistors These medium-power, high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. http://onsemi.com Features • Pb-Free Package is Available** 3.0 A, 40-80 V, 30 W • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A • Excellent Power Dis

1.17. 2n4923g.pdf Size:91K _onsemi

2N49
2N49

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

1.18. 2n4901-2n4902-2n4903.pdf Size:124K _comset

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2N49

PNP SILICON TRANSISTORS, PNP SILICON TRANSISTORS, EPITAXIAL BASE EPITAXIAL BASE LF Large signal power amplification Switching medium current ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N4901 -40 VCBO Collector to Base Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCEO #Collector-Emitter Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCER Collector-Emitter Voltage 2

1.19. 2n4898-99 2n4900.pdf Size:180K _mospec

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2N49

A A A A

1.20. 2n4901-03 2n5067-69.pdf Size:171K _mospec

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2N49

A A A A

1.21. 2n4989.pdf Size:169K _no

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2N49



1.22. 2n4928csm.pdf Size:16K _semelab

2N49
2N49

2N4928CSM GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA FOR HIGH RELIABILITY APPLICATIONS Dimensions in mm (inches) 0.51 ± 0.10 FEATURES (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON PNP TRANSISTOR 3 • HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) • CECC SCREENING OPTIONS 21 • SPACE QUALITY LEVELS OPTIONS

1.23. 2n4939dcsm.pdf Size:9K _semelab

2N49

查询"2N4938DCSM"供应商 2N4939DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 40V CEO 6.22 ± 0.13 A = 1.2

1.24. 2n4911xsmd05.pdf Size:10K _semelab

2N49

2N4911XSMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her

1.25. 2n4900x.pdf Size:14K _semelab

2N49
2N49

2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO–66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.

1.26. 2n4901smd.pdf Size:10K _semelab

2N49

2N4901SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 40V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

1.27. 2n4908.pdf Size:11K _semelab

2N49

2N4908 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

1.28. 2n4910x 2n4911x 2n4912x.pdf Size:15K _semelab

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2N49

2N4910X 2N4911X 2N4912X MECHANICAL DATA NPN EPITAXIAL Dimensions in mm (inches) POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS • SCREENING OPTIONS AVAILABE 1 2 • TO66 PACKAGE 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO–66 Metal Package. PIN 1 =

1.29. 2n4909.pdf Size:11K _semelab

2N49

2N4909 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

1.30. 2n4925.pdf Size:11K _semelab

2N49

2N4925 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 150V dia. IC = 0.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

1.31. 2n4924.pdf Size:11K _semelab

2N49

2N4924 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 100V dia. IC = 0.2A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

1.32. 2n4928dcsm.pdf Size:10K _semelab

2N49

2N4928DCSM Dimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 ± 0.15 2.29 ± 0.20 1.65 ± 0.13 (0.055 ± 0.006) (0.09 ± 0.008) (0.065 ± 0.005) Applications 2 3 1 4 Dual Bipolar PNP Devices. A 0.23 6 5 rad. (0.009) V = 100V CEO 6.22 ± 0.13 A = 1.27 ± 0.13 I = 0.1A C (0.

1.33. 2n4910xsmd.pdf Size:10K _semelab

2N49

2N4910XSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

1.34. 2n4907.pdf Size:11K _semelab

2N49

2N4907 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 40V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a

1.35. 2n4911xsmd.pdf Size:10K _semelab

2N49

2N4911XSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 60V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

1.36. 2n4910xsmd05.pdf Size:10K _semelab

2N49

2N4910XSMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her

1.37. 2n4923.pdf Size:194K _cdil

2N49
2N49

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N4923 TO-126 E C B General Purpose Power Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION VALUE UNIT Collector -Base Voltage VCBO 80 V Collector -Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 3.0 A Bas

1.38. 2n4921 2n4922 2n4923.pdf Size:41K _jmnic

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2N49

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4918,2N4919 2N4920 ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

1.39. 2n4918 2n4919 2n4920.pdf Size:41K _jmnic

2N49
2N49

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4921,2N4922 2N4923 ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

1.40. 2n4898 2n4899 2n4900.pdf Size:50K _jmnic

2N49
2N49

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION · ·With TO-66 package ·Low collector-emitter saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi

1.41. 2n4901 2n4902 2n4903.pdf Size:43K _jmnic

2N49
2N49

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION ·With TO-3 package ·Complement to type 2N5067,2N5068,2N5069 ·Low collector-emitter saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) an

1.42. 2n3743 2n4930 2n4931.pdf Size:55K _microsemi

2N49
2N49

TECHNICAL DATA PNP HIGH VOLTAGE SILICON TRANSISTOR Qualified per MIL-PRF-19500/397 Devices Qualified Level JAN, JANTX 2N3743 2N4930 2N4931 JANTXV MAXIMUM RATINGS Ratings Sym 2N3743 2N4930 2N4931 Unit Collector-Emitter Voltage 300 200 250 Vdc VCEO Collector-Base Voltage 300 200 250 Vdc VCBO Emitter-Base Voltage 5.0 Vdc VEBO Collector Current 200 mAdc IC Total

1.43. 2n4990.pdf Size:10K _planeta

2N49

2N4990 Silicon unilateral switch (SUS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Parameter, units Limits Vrrm Peak reverse voltage, V -30 IT(rms) DC forward anode current, mA 175 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width)

1.44. 2n4991.pdf Size:10K _planeta

2N49

2N4991 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width) 1 P Power dissipation, mW 300

1.45. 2n4993.pdf Size:9K _planeta

2N49

2N4993 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width) 1 P Power dissipation, mW 300

1.46. 2n4987.pdf Size:10K _planeta

2N49

2N4987 Silicon unilateral switch (SUS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Parameter, units Limits Vrrm Peak reverse voltage, V -30 IT(rms) DC forward anode current, mA 175 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width)

1.47. 2n4988.pdf Size:10K _planeta

2N49

2N4988 Silicon unilateral switch (SUS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Parameter, units Limits Vrrm Peak reverse voltage, V -30 IT(rms) DC forward anode current, mA 175 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width)

1.48. 2n4992.pdf Size:9K _planeta

2N49

2N4992 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width) 1 P Power dissipation, mW 300 Electri

1.49. 2n4957.pdf Size:43K _semicoa

2N49
2N49

Data Sheet No. 2N4957 Generic Part Number: Type 2N4957 2N4957 Geometry 0006 Polarity PNP REF: MIL-PRF-19500/426 Qual Level: JAN - JANS Features: • Small signal RF silicon transistor designed for high-gain, low-noise applications. • Housed in a TO-72 case. • Also available in chip form using the 0006 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/426

1.50. 2n4921 2n4922 2n4923.pdf Size:118K _inchange_semiconductor

2N49
2N49

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4918/4919/4920 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2

1.51. 2n4915.pdf Size:36K _inchange_semiconductor

2N49
2N49

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4915 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·DC Current Gain- : hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4906 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB

1.52. 2n4903.pdf Size:37K _inchange_semiconductor

2N49
2N49

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4903 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·DC Current Gain- : hFE= 20-80 @IC= -1A ·Complement to Type 2N5069 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB

1.53. 2n4904.pdf Size:37K _inchange_semiconductor

2N49
2N49

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4904 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·DC Current Gain- : hFE= 25-100 @IC= -2.5A ·Complement to Type 2N4913 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S

1.54. 2n4902.pdf Size:37K _inchange_semiconductor

2N49
2N49

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4902 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·DC Current Gain- : hFE= 20-80 @IC= -1A ·Complement to Type 2N5068 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB

1.55. 2n4906.pdf Size:36K _inchange_semiconductor

2N49
2N49

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4906 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·DC Current Gain- : hFE= 25-100 @IC= -2.5A ·Complement to Type 2N4915 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S

1.56. 2n4908.pdf Size:37K _inchange_semiconductor

2N49
2N49

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4908 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A ·DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB

1.57. 2n4909.pdf Size:37K _inchange_semiconductor

2N49
2N49

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4909 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A ·DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB

1.58. 2n4913.pdf Size:36K _inchange_semiconductor

2N49
2N49

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4913 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·DC Current Gain- : hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4904 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB

1.59. 2n4910.pdf Size:53K _inchange_semiconductor

2N49
2N49

 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4910 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation APPLICATIONS ·Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=

1.60. 2n4912.pdf Size:53K _inchange_semiconductor

2N49
2N49

 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4912 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 80V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation ·Complement to Type 2N4900 APPLICATIONS ·Designed for driver circuits, switching and amplifier applications.

1.61. 2n4904 2n4905 2n4906.pdf Size:131K _inchange_semiconductor

2N49
2N49

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4904 2N4905 2N4906 DESCRIPTION ·With TO-3 package ·Complement to type 2N4913/4914/4915 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll

1.62. 2n4918 2n4919 2n4920.pdf Size:118K _inchange_semiconductor

2N49
2N49

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4921/4922/4923 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2

1.63. 2n4914.pdf Size:36K _inchange_semiconductor

2N49
2N49

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N4914 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max.)@ IC= 5A ·DC Current Gain- : hFE= 25-100 @IC= 2.5A ·Complement to Type 2N4905 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB

1.64. 2n4911.pdf Size:53K _inchange_semiconductor

2N49
2N49

 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4911 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation APPLICATIONS ·Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=

1.65. 2n4898 2n4899 2n4900.pdf Size:126K _inchange_semiconductor

2N49
2N49

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION · ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi

1.66. 2n4907.pdf Size:37K _inchange_semiconductor

2N49
2N49

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4907 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A ·DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB

1.67. 2n4918.pdf Size:53K _inchange_semiconductor

2N49
2N49

 INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2N4918 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -40V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= -0.6V(Max.)@ IC= -1A ·Wide Area of Safe Operation ·Complement to Type 2N4921 APPLICATIONS ·Designed for driver circuits, switching and amplifier application

1.68. 2n4922.pdf Size:214K _inchange_semiconductor

2N49
2N49

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N4922 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : V = 60V(Min) CEO(SUS) ·Low Collector Saturatioin Voltage- : V = 0.6V(Max.)@ I = 1A CE(sat) C ·Wide Area of Safe Operation ·Complement to Type 2N4919 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for d

1.69. 2n4901 2n4902 2n4903.pdf Size:117K _inchange_semiconductor

2N49
2N49

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION ·With TO-3 package ·Complement to type 2N5067/5068/5069 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll

1.70. 2n4999 2n5001.pdf Size:98K _ssdi

2N49
2N49



Otros transistores... 2N4889 , 2N4890 , 2N4890S , 2N4895 , 2N4896 , 2N4897 , 2N4898 , 2N4899 , C103 , 2N4900 , 2N4901 , 2N4901SM , 2N4902 , 2N4903 , 2N4904 , 2N4905 , 2N4906 .

 

 
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Recientemente añadidas las descripciónes de los transistores:

BJT: HTL194 | C3198 | AT41586 | TIP540 | SBT92 | SAP16N | RN2130FV | D71F2T1 | 2T951V | 2T951B | 2T951A | 104NU71 | 103NU71 | 102NU71 | 101NU71 | YZ21 | WT062 | TL142 | TIP3055T | TIP2955T |

 

 

 
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