2N4905 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4905
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 87 W
Tensión colector-base (Vcb): 60 V
Tensión colector-emisor (Vce): 60 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 4 MHz
Ganancia de corriente contínua (hfe): 25
Empaquetado / Estuche: TO3
Búsqueda de reemplazo de transistor bipolar 2N4905
2N4905 Datasheet (PDF)
1.1. 2n4904 2n4905 2n4906 2n4913 2n4914 2n4915.pdf 
Size:63K _central
145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
1.2. 2n4904 2n4905 2n4906.pdf Size:131K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4904 2N4905 2N4906 DESCRIPTION ·With TO-3 package ·Complement to type 2N4913/4914/4915 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll
5.1. 2n4901-2n4902-2n4903.pdf Size:124K _comset
PNP SILICON TRANSISTORS, PNP SILICON TRANSISTORS, EPITAXIAL BASE EPITAXIAL BASE LF Large signal power amplification Switching medium current ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N4901 -40 VCBO Collector to Base Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCEO #Collector-Emitter Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCER Collector-Emitter Voltage 2
5.2. 2n4898-99 2n4900.pdf Size:180K _mospec
A A A A
5.3. 2n4901-03 2n5067-69.pdf Size:171K _mospec
A A A A
5.4. 2n4900x.pdf Size:14K _semelab
2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO–66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.
5.5. 2n4901smd.pdf Size:10K _semelab
2N4901SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 40V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0
5.6. 2n4908.pdf Size:11K _semelab
2N4908 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
5.7. 2n4909.pdf Size:11K _semelab
2N4909 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
5.8. 2n4907.pdf Size:11K _semelab
2N4907 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 40V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
5.9. 2n4898 2n4899 2n4900.pdf Size:50K _jmnic
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION · ·With TO-66 package ·Low collector-emitter saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi
5.10. 2n4901 2n4902 2n4903.pdf Size:43K _jmnic
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION ·With TO-3 package ·Complement to type 2N5067,2N5068,2N5069 ·Low collector-emitter saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) an
5.11. 2n4903.pdf Size:37K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4903 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·DC Current Gain- : hFE= 20-80 @IC= -1A ·Complement to Type 2N5069 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB
5.12. 2n4904.pdf Size:37K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4904 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·DC Current Gain- : hFE= 25-100 @IC= -2.5A ·Complement to Type 2N4913 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S
5.13. 2n4902.pdf Size:37K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4902 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·DC Current Gain- : hFE= 20-80 @IC= -1A ·Complement to Type 2N5068 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMB
5.14. 2n4906.pdf Size:36K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4906 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1.5V(Max.)@ IC= -5A ·DC Current Gain- : hFE= 25-100 @IC= -2.5A ·Complement to Type 2N4915 APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) S
5.15. 2n4908.pdf Size:37K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4908 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A ·DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB
5.16. 2n4909.pdf Size:37K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4909 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A ·DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB
5.17. 2n4898 2n4899 2n4900.pdf Size:126K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION · ·With TO-66 package ·Low collector saturation voltage ·Excellent safe operating area ·2N4900 complement to type 2N4912 APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi
5.18. 2n4907.pdf Size:37K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4907 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.75V(Max.)@ IC= -4A ·DC Current Gain- : hFE= 20-80 @IC= -4A APPLICATIONS ·Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCB
5.19. 2n4901 2n4902 2n4903.pdf Size:117K _inchange_semiconductor
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION ·With TO-3 package ·Complement to type 2N5067/5068/5069 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
