2N4905. Аналоги и основные параметры
Наименование производителя: 2N4905
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 87 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 5 A
Предельная температура PN-перехода (Tj): 200 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hFE): 25
Корпус транзистора: TO3
Аналоги (замена) для 2N4905
- подборⓘ биполярного транзистора по параметрам
2N4905 даташит
..2. Size:131K inchange semiconductor
2n4904 2n4905 2n4906.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4904 2N4905 2N4906 DESCRIPTION With TO-3 package Complement to type 2N4913/4914/4915 Low collector saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll
9.1. Size:124K comset
2n4901-2n4902-2n4903.pdf 
PNP SILICON TRANSISTORS, PNP SILICON TRANSISTORS, EPITAXIAL BASE EPITAXIAL BASE LF Large signal power amplification Switching medium current ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N4901 -40 VCBO Collector to Base Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCEO #Collector-Emitter Voltage 2N4902 -60 V 2N4903 -80 2N4901 -40 VCER Collector-Emitter Voltage 2
9.4. Size:11K semelab
2n4908.pdf 
2N4908 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 60V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
9.5. Size:10K semelab
2n4901smd.pdf 
2N4901SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 40V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0
9.6. Size:11K semelab
2n4909.pdf 
2N4909 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 80V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
9.7. Size:14K semelab
2n4900x.pdf 
2N4898X 2N4899X 2N4900X MECHANICAL DATA Dimensions in mm (inches) PNP EPITAXIAL BASE MEDIUM POWER TRANSISTOR 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS Medium power, low frequency PNP bipolar transistor in a hermetically sealed TO 66 metal package. 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min.
9.8. Size:11K semelab
2n4907.pdf 
2N4907 Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 Bipolar PNP Device. 3 VCEO = 40V (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) IC = 10A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
9.9. Size:43K jmnic
2n4901 2n4902 2n4903.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067,2N5068,2N5069 Low collector-emitter saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) an
9.10. Size:50K jmnic
2n4898 2n4899 2n4900.pdf 
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector-emitter saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fi
9.11. Size:37K inchange semiconductor
2n4908.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4908 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB
9.12. Size:37K inchange semiconductor
2n4902.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4902 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 20-80 @IC= -1A Complement to Type 2N5068 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB
9.13. Size:37K inchange semiconductor
2n4909.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4909 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB
9.14. Size:37K inchange semiconductor
2n4903.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4903 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 20-80 @IC= -1A Complement to Type 2N5069 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB
9.15. Size:36K inchange semiconductor
2n4906.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4906 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 25-100 @IC= -2.5A Complement to Type 2N4915 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S
9.16. Size:117K inchange semiconductor
2n4901 2n4902 2n4903.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4901 2N4902 2N4903 DESCRIPTION With TO-3 package Complement to type 2N5067/5068/5069 Low collector saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Coll
9.17. Size:37K inchange semiconductor
2n4904.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4904 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -1.5V(Max.)@ IC= -5A DC Current Gain- hFE= 25-100 @IC= -2.5A Complement to Type 2N4913 APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) S
9.18. Size:37K inchange semiconductor
2n4907.pdf 
INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2N4907 DESCRIPTION Low Collector Saturation Voltage- VCE(sat)= -0.75V(Max.)@ IC= -4A DC Current Gain- hFE= 20-80 @IC= -4A APPLICATIONS Designed for general purpose use in power amplifier and switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCB
9.19. Size:126K inchange semiconductor
2n4898 2n4899 2n4900.pdf 
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4898 2N4899 2N4900 DESCRIPTION With TO-66 package Low collector saturation voltage Excellent safe operating area 2N4900 complement to type 2N4912 APPLICATIONS Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplifi
Другие транзисторы: 2N4899, 2N49, 2N4900, 2N4901, 2N4901SM, 2N4902, 2N4903, 2N4904, 2SD669, 2N4906, 2N4907, 2N4908, 2N4909, 2N4910, 2N4910SM, 2N4911, 2N4911SM
