MUN2211LT1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MUN2211LT1 📄📄
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 50 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 35
Encapsulados: SOT23
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MUN2211LT1 datasheet
mmun2211lt1-d.pdf
MMUN2211LT1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series
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MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The BRT (Bias Resistor COLLECTOR R1 (OUTPUT) Transistor) contains a single transistor
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Lead Free RoHS Compliant MEI
Otros transistores... MT4104, MT6001, MT6002, MT6003, MT9001, MT9002, MT9003, MTC35-300, 2SA1837, MUN2211LT2, MUN2212LT1, MUN2212LT2, MUN2213LT1, MUN2213LT2, MUN2214LT1, MUN2214LT2, MUN2215LT1
Parámetros del transistor bipolar y su interrelación.
History: MUN5116T1G | BLT61
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