MUN2211LT1 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MUN2211LT1  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Corriente del colector DC máxima (Ic): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 35

Encapsulados: SOT23

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MUN2211LT1 datasheet

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mmun2211lt1-d.pdf pdf_icon

MUN2211LT1

MMUN2211LT1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single http //onsemi.com device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series

 0.2. Size:215K  onsemi
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MUN2211LT1

MMUN2211LT1G Series, SMMUN2211LT1G Series, NSVMMUN2232LT1G Bias Resistor Transistor NPN Silicon Surface Mount Transistor http //onsemi.com with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single PIN 3 device and its external resistor bias network. The BRT (Bias Resistor COLLECTOR R1 (OUTPUT) Transistor) contains a single transistor

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