2N4910 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N4910
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 25 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 4 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Producto de corriente -- ganancia — ancho de banda (ft): 7 MHz
Ganancia de corriente contínua (hfe): 20
Empaquetado / Estuche: TO66
Búsqueda de reemplazo de transistor bipolar 2N4910
2N4910 Datasheet (PDF)
1.1. 2n4910x 2n4911x 2n4912x.pdf 
Size:15K _semelab
2N4910X 2N4911X 2N4912X MECHANICAL DATA NPN EPITAXIAL Dimensions in mm (inches) POWER TRANSISTOR IN TO66 HERMETIC PACKAGE 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. 3.61 (0.142) max. 3.86 (0.145) rad. APPLICATIONS • SCREENING OPTIONS AVAILABE 1 2 • TO66 PACKAGE 1.27 (0.050) 1.91 (0.750) 4.83 (0.190) 5.33 (0.210) 9.14 (0.360) min. TO–66 Metal Package. PIN 1 =
1.2. 2n4910xsmd.pdf Size:10K _semelab
2N4910XSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (
1.3. 2n4910xsmd05.pdf Size:10K _semelab
2N4910XSMD05 Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296) 0.76 (0.030) Ceramic Surface Mount min. 3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005) Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 40V IC = 4A 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) 0.50 (0.020) All Semelab her
1.4. 2n4910.pdf Size:53K _inchange_semiconductor
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N4910 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 40V(Min) ·Low Collector Saturatioin Voltage- : VCE(sat)= 0.6V(Max.)@ IC= 1A ·Wide Area of Safe Operation APPLICATIONS ·Designed for driver circuits, switching and amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=
Otros transistores... 2N4902 , 2N4903 , 2N4904 , 2N4905 , 2N4906 , 2N4907 , 2N4908 , 2N4909 , BC556 , 2N4910SM , 2N4911 , 2N4911SM , 2N4912 , 2N4912SM , 2N4912X , 2N4913 , 2N4914 .
