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1602 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 1602
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.6 W
   Tensión colector-base (Vcb): 35 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.05 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 110
   Paquete / Cubierta: TO92

 Búsqueda de reemplazo de transistor bipolar 1602

 

1602 Datasheet (PDF)

 0.1. Size:168K  motorola
mj16020r.pdf

1602
1602

Order this documentMOTOROLAby MJ16020/DSEMICONDUCTOR TECHNICAL DATAMJ16020MJ16022Advance InformationSWITCHMODE SeriesNPN SILICON POWERNPN Silicon Power TransistorsTRANSISTOR30 A

 0.2. Size:206K  toshiba
2sb1602.pdf

1602
1602

 0.3. Size:673K  toshiba
2sk1602.pdf

1602
1602

 0.4. Size:189K  isahaya
isa1235ac1 isa1602am1.pdf

1602
1602

SMALL-SIGNAL TRANSISTORISA1235AC1 ISA1602AM1FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEOUTLINE DRAWING UNITmmDESCRIPTION ISA1235AC1 ISA1602AM1 is super mini ISA1235AC1 ISA1602AM1 package resin sealed silicon PNP epitaxial type transistor. 2.12.8These are designed for low frequency voltage 0.425 1.25 0.4251.5 0.65 0.65amplify applicati

 0.5. Size:212K  inchange semiconductor
2sk1602.pdf

1602
1602

isc N-Channel MOSFET Transistor 2SK1602DESCRIPTIONDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE M

 0.6. Size:210K  inchange semiconductor
2sd1602.pdf

1602
1602

isc Silicon NPN Darlington Power Transistor 2SD1602DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2AFE CComplement to Type 2SB1102Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA

 0.7. Size:200K  inchange semiconductor
pmd1602k.pdf

1602
1602

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1602K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD1702K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VA

Otros transistores... 142T2 , 1501 , 1502 , 152NU70 , 153NU70 , 154NU70 , 155NU70 , 1601 , S8550 , 16029 , 16039 , 16207 , 16207B , 16298 , 16299 , 16300 , 16305 .

 

 
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