1602 Todos los transistores

Order this document MOTOROLA by MJ16020/D SEMICONDUCTOR TECHNICAL DATA MJ16020 MJ16022 Advance Information SWITCHMODE Series NPN SILICON POWER NPN Silicon Power Transistors TRANSISTOR 30 AMPERES These transistors are designed for high voltage, high speed, power switching in 450 VOLTS inductive circuits where fall time is critical. They are particularly suited for line opera

SMALL-SIGNAL TRANSISTOR ISA1235AC1 ISA1602AM1 FOR LOW FREQUENCY AMPLIFY APPLICATION SILICON PNP EPITAXIAL TYPE OUTLINE DRAWING UNIT mm DESCRIPTION ISA1235AC1 ISA1602AM1 is super mini ISA1235AC1 ISA1602AM1 package resin sealed silicon PNP epitaxial type transistor. 2.1 2.8 These are designed for low frequency voltage 0.425 1.25 0.425 1.5 0.65 0.65 amplify applicati

isc N-Channel MOSFET Transistor 2SK1602 DESCRIPTION Drain Current I = 2.8A@ T =25 D C Drain Source Voltage- V =800V(Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE M

isc Silicon NPN Darlington Power Transistor 2SD1602 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 80V(Min) (BR)CEO High DC Current Gain h = 1000(Min) @I = 2A FE C Complement to Type 2SB1102 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1602K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD1702K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VA