1602 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Order this documentMOTOROLAby MJ16020/DSEMICONDUCTOR TECHNICAL DATAMJ16020MJ16022Advance InformationSWITCHMODE SeriesNPN SILICON POWERNPN Silicon Power TransistorsTRANSISTOR30 AMPERESThese transistors are designed for highvoltage, highspeed, power switching in450 VOLTSinductive circuits where fall time is critical. They are particularly suited forlineopera

SMALL-SIGNAL TRANSISTORISA1235AC1 ISA1602AM1FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEOUTLINE DRAWING UNITmmDESCRIPTION ISA1235AC1 ISA1602AM1 is super mini ISA1235AC1 ISA1602AM1 package resin sealed silicon PNP epitaxial type transistor. 2.12.8These are designed for low frequency voltage 0.425 1.25 0.4251.5 0.65 0.65amplify applicati

isc N-Channel MOSFET Transistor 2SK1602DESCRIPTIONDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE M

isc Silicon NPN Darlington Power Transistor 2SD1602DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2AFE CComplement to Type 2SB1102Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1602K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD1702K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VA