1602 Datasheet, Equivalent, Cross Reference Search
Type Designator: 1602
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.6 W
Maximum Collector-Base Voltage |Vcb|: 35 V
Maximum Collector-Emitter Voltage |Vce|: 30 V
Maximum Emitter-Base Voltage |Veb|: 4 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 110
Noise Figure, dB: -
Package: TO92
1602 Transistor Equivalent Substitute - Cross-Reference Search
1602 Datasheet (PDF)
mj16020r.pdf
Order this documentMOTOROLAby MJ16020/DSEMICONDUCTOR TECHNICAL DATAMJ16020MJ16022Advance InformationSWITCHMODE SeriesNPN SILICON POWERNPN Silicon Power TransistorsTRANSISTOR30 AMPERESThese transistors are designed for highvoltage, highspeed, power switching in450 VOLTSinductive circuits where fall time is critical. They are particularly suited forlineopera
isa1235ac1 isa1602am1.pdf
SMALL-SIGNAL TRANSISTORISA1235AC1 ISA1602AM1FOR LOW FREQUENCY AMPLIFY APPLICATIONSILICON PNP EPITAXIAL TYPEOUTLINE DRAWING UNITmmDESCRIPTION ISA1235AC1 ISA1602AM1 is super mini ISA1235AC1 ISA1602AM1 package resin sealed silicon PNP epitaxial type transistor. 2.12.8These are designed for low frequency voltage 0.425 1.25 0.4251.5 0.65 0.65amplify applicati
2sk1602.pdf
isc N-Channel MOSFET Transistor 2SK1602DESCRIPTIONDrain Current I = 2.8A@ T =25D CDrain Source Voltage-: V =800V(Min)DSSMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and relay drivers.ABSOLUTE M
2sd1602.pdf
isc Silicon NPN Darlington Power Transistor 2SD1602DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOHigh DC Current Gain: h = 1000(Min) @I = 2AFE CComplement to Type 2SB1102Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RA
pmd1602k.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1602K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD1702K APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER VA
Datasheet: 142T2 , 1501 , 1502 , 152NU70 , 153NU70 , 154NU70 , 155NU70 , 1601 , S8550 , 16029 , 16039 , 16207 , 16207B , 16298 , 16299 , 16300 , 16305 .
