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2N4923 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4923

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 3 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Capacitancia de salida (Cc): 100 pF

Ganancia de corriente contínua (hfe): 20

Empaquetado / Estuche: TO126

Búsqueda de reemplazo de transistor bipolar 2N4923

 

2N4923 Datasheet (PDF)

1.1. 2n4921 2n4922 2n4923.pdf Size:238K _motorola

2N4923
2N4923

Order this document MOTOROLA by 2N4921/D SEMICONDUCTOR TECHNICAL DATA 2N4921 Medium-Power Plastic NPN thru Silicon Transistors 2N4923 * . . . designed for driver circuits, switching, and am

1.2. 2n4921 2n4922 2n4923.pdf Size:90K _onsemi

2N4923
2N4923

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

 1.3. 2n4923g.pdf Size:91K _onsemi

2N4923
2N4923

2N4921, 2N4922, 2N4923 2N4923 is a Preferred Device Medium-Power Plastic NPN Silicon Transistors These high-performance plastic devices are designed for driver circuits, switching, and amplifier applications. Features http://onsemi.com • Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A 1.0 AMPERE • Excellent Power Dissipation Due to Thermopad Construction - PD = 30

1.4. 2n4923.pdf Size:194K _cdil

2N4923
2N4923

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTOR 2N4923 TO-126 E C B General Purpose Power Transistor ABSOLUTE MAXIMUM RATINGS (Ta=25 deg C) DESCRIPTION VALUE UNIT Collector -Base Voltage VCBO 80 V Collector -Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5.0 V Collector Current Continuous IC 3.0 A Bas

 1.5. 2n4921 2n4922 2n4923.pdf Size:41K _jmnic

2N4923
2N4923

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4918,2N4919 2N4920 ·Excellent safe operating area ·Low collector-emitter saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to

1.6. 2n4921 2n4922 2n4923.pdf Size:118K _inchange_semiconductor

2N4923
2N4923

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION · ·With TO-126 package ·Complement to type 2N4918/4919/4920 ·Excellent safe operating area ·Low collector saturation voltage APPLICATIONS ·For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2

Otros transistores... 2N4915 , 2N4916 , 2N4917 , 2N4918 , 2N4919 , 2N4920 , 2N4921 , 2N4922 , BC107 , 2N4924 , 2N4924S , 2N4925 , 2N4925S , 2N4926 , 2N4926S , 2N4927 , 2N4927S .

 

 
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