2N4923 Datasheet and Replacement
Type Designator: 2N4923
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 30
W
Maximum Collector-Base Voltage |Vcb|: 80
V
Maximum Collector-Emitter Voltage |Vce|: 80
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 3
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 3
MHz
Collector Capacitance (Cc): 100
pF
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package:
TO126
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2N4923 Datasheet (PDF)
..1. Size:238K motorola
2n4921 2n4922 2n4923.pdf 
Order this documentMOTOROLAby 2N4921/DSEMICONDUCTOR TECHNICAL DATA2N4921Medium-Power Plastic NPNthruSilicon Transistors2N4923*. . . designed for driver circuits, switching, and amplifier applications. Thesehighperformance plastic devices feature:*Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp1 AMPERE Excellent
..2. Size:90K onsemi
2n4921 2n4922 2n4923.pdf
2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30
..3. Size:194K cdil
2n4923.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON EPITAXIAL TRANSISTOR 2N4923TO-126ECBGeneral Purpose Power TransistorABSOLUTE MAXIMUM RATINGS (Ta=25 deg C)DESCRIPTION VALUE UNITCollector -Base Voltage VCBO 80 VCollector -Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5.0 VCollector Current Continuous IC 3.0 ABas
..4. Size:41K jmnic
2n4921 2n4922 2n4923.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918,2N4919 2N4920 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to
..5. Size:118K inchange semiconductor
2n4921 2n4922 2n4923.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N4921 2N4922 2N4923 DESCRIPTION With TO-126 package Complement to type 2N4918/4919/4920 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
..6. Size:174K inchange semiconductor
2n4923.pdf
isc Silicon NPN Power Transistor 2N4923DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector Saturation Voltage-: V = 0.6V(Max.)@ I = 1ACE(sat) CWide Area of Safe OperationComplement to Type 2N4920Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for driver circuits, switching
0.1. Size:91K onsemi
2n4923g.pdf
2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30
0.2. Size:241K onsemi
2n4921g 2n4922g 2n4923g.pdf
2N4921G, 2N4922G,2N4923GMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.www.onsemi.comFeatures1.0 AMPERE Low Saturation VoltageGENERAL PURPOSE Excellent Power DissipationPOWER TRANSISTORS Excellent Safe Operating Area40-80 VOLTS, 30 WATTS Complement
9.1. Size:254K motorola
2n4918 2n4919 2n4920.pdf
Order this documentMOTOROLAby 2N4918/DSEMICONDUCTOR TECHNICAL DATA2N4918Medium-Power Plastic PNPthruSilicon Transistors*2N4920. . . designed for driver circuits, switching, and amplifier applications. Thesehighperformance plastic devices feature:*Motorola Preferred Device Low Saturation Voltage VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 Amp3 AMPERE Excellent
9.4. Size:113K onsemi
2n4918 2n4919 2n4920.pdf
ON Semiconductor)2N4918Medium-Power Plastic PNPthruSilicon Transistors*2N4920. . . designed for driver circuits, switching, and amplifier*ON Semiconductor Preferred Deviceapplications. These highperformance plastic devices feature:3 AMPERE Low Saturation Voltage GENERALPURPOSEVCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 AmpPOWER TRANSISTORS4080 VOLTS Exc
9.5. Size:117K onsemi
2n4920g9285.pdf
2N4918 - 2N4920* SeriesPreferred Device Medium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Pb-Free Package is Available**3.0 A, 40-80 V, 30 W Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dis
9.6. Size:263K onsemi
2n4918 2n4919 2n4920 2n4920g.pdf
2N4918 - 2N4920 SeriesMedium-Power Plastic PNPSilicon TransistorsThese medium-power, high-performance plastic devices aredesigned for driver circuits, switching, and amplifier applications.http://onsemi.comFeatures Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A Excellent Power Dissipation, PD = 30 W @ TC = 25_C3.0 A, 40-80 V, 30 W Excellent Safe Oper
9.7. Size:91K onsemi
2n4921g.pdf
2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30
9.8. Size:91K onsemi
2n4922g.pdf
2N4921, 2N4922, 2N49232N4923 is a Preferred DeviceMedium-Power PlasticNPN Silicon TransistorsThese high-performance plastic devices are designed for drivercircuits, switching, and amplifier applications.Featureshttp://onsemi.com Low Saturation Voltage - VCE(sat) = 0.6 Vdc (Max) @ IC = 1.0 A1.0 AMPERE Excellent Power Dissipation Due to Thermopad Construction -PD = 30
9.9. Size:16K semelab
2n4928csm.pdf
2N4928CSMGENERAL PURPOSE TRANSISTOR IN AHERMETICALLY SEALEDCERAMIC SURFACE MOUNT PACKAGEMECHANICAL DATAFOR HIGH RELIABILITY APPLICATIONSDimensions in mm (inches)0.51 0.10FEATURES(0.02 0.004) 0.31rad.(0.012) SILICON PNP TRANSISTOR3 HERMETIC CERAMIC SURFACE MOUNTPACKAGE (SOT23 COMPATIBLE) CECC SCREENING OPTIONS21 SPACE QUALITY LEVELS OPTIONS
9.10. Size:11K semelab
2n4925.pdf
2N4925Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 150V dia.IC = 0.2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
9.11. Size:10K semelab
2n4928dcsm.pdf
2N4928DCSMDimensions in mm (inches). Dual Bipolar PNP Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar PNP Devices. A0.236 5rad. (0.009) V = 100V CEO6.22 0.13 A = 1.27 0.13I = 0.1A C(0.
9.12. Size:11K semelab
2n4924.pdf
2N4924Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34)9.40 (0.37) Hermetically sealed TO39 7.75 (0.305)8.51 (0.335)Metal Package. 6.10 (0.240)6.60 (0.260)Bipolar NPN Device. 0.89max.(0.035)12.70(0.500)min. 0.41 (0.016)0.53 (0.021)VCEO = 100V dia.IC = 0.2A 5.08 (0.200)typ.2.54All Semelab hermetically sealed products 2(0.100) 1
9.13. Size:41K jmnic
2n4918 2n4919 2n4920.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921,2N4922 2N4923 Excellent safe operating area Low collector-emitter saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to
9.14. Size:214K inchange semiconductor
2n4922.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N4922DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Low Collector Saturatioin Voltage-: V = 0.6V(Max.)@ I = 1ACE(sat) CWide Area of Safe OperationComplement to Type 2N4919Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for d
9.15. Size:118K inchange semiconductor
2n4918 2n4919 2n4920.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N4918 2N4919 2N4920 DESCRIPTION With TO-126 package Complement to type 2N4921/4922/4923 Excellent safe operating area Low collector saturation voltage APPLICATIONS For driver circuits ,switching ,and amplifier applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2
Datasheet: 2N4915
, 2N4916
, 2N4917
, 2N4918
, 2N4919
, 2N4920
, 2N4921
, 2N4922
, C945
, 2N4924
, 2N4924S
, 2N4925
, 2N4925S
, 2N4926
, 2N4926S
, 2N4927
, 2N4927S
.
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