2N4997 Todos los transistores

 

2N4997 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N4997

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.25 W

Tensión colector-base (Vcb): 30 V

Tensión colector-emisor (Vce): 18 V

Corriente del colector DC máxima (Ic): 0.05 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 600 MHz

Capacitancia de salida (Cc): 0.7 pF

Ganancia de corriente contínua (hfe): 30

Empaquetado / Estuche: X55-1

Búsqueda de reemplazo de transistor bipolar 2N4997

 

2N4997 Datasheet (PDF)

5.1. 2n4990.pdf Size:10K _planeta

2N4997

2N4990 Silicon unilateral switch (SUS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Cathode, 2- Gate, 3- Anode Ratings Symbol Parameter, units Limits Vrrm Peak reverse voltage, V -30 IT(rms) DC forward anode current, mA 175 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width)

5.2. 2n4991.pdf Size:10K _planeta

2N4997

2N4991 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width) 1 P Power dissipation, mW 300

 5.3. 2n4993.pdf Size:9K _planeta

2N4997

2N4993 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width) 1 P Power dissipation, mW 300

5.4. 2n4992.pdf Size:9K _planeta

2N4997

2N4992 Silicon bilateral switch (SBS) in package TO-92 0.45max 0.7max 1 5.2 2.5 2 14.5 1.6 5.2 3 4.2 Pinouts: 1- Anode II, 2- Gate, 3- Anode I Ratings Symbol Parameter, units Limits IT(rms) DC forward anode current, mA 200 Igm DC gate current, mA 5 IT(sm) Peak recurrent forward current, A, (1% duty cycle, 10µsec pulse width) 1 P Power dissipation, mW 300 Electri

 5.5. 2n4999 2n5001.pdf Size:98K _ssdi

2N4997
2N4997



Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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