2N50 Todos los transistores

 

2N50 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2N50

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.05 W

Tensión colector-base (Vcb): 15 V

Tensión colector-emisor (Vce): 15 V

Corriente del colector DC máxima (Ic): 0.001 A

Temperatura operativa máxima (Tj): 80 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 3 MHz

Ganancia de corriente contínua (hfe): 2

Empaquetado / Estuche: X016

Búsqueda de reemplazo de transistor bipolar 2N50

 

2N50 Datasheet (PDF)

1.1. 2n5038 2n5039.pdf Size:124K _motorola

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2N50

Order this document MOTOROLA by 2N5038/D SEMICONDUCTOR TECHNICAL DATA 2N5038 * 2N5039 NPN Silicon Transistors *Motorola Preferred Device . . . fast switching speeds and high current capacity

1.2. 2n5087rev0.pdf Size:300K _motorola

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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5087/D Amplifier Transistor PNP Silicon 2N5087 COLLECTOR 3 Motorola Preferred Device 2 BASE 1 EMITTER 1 2 3 MAXIMUM RAT

 1.3. mtm2n50.pdf Size:172K _motorola

2N50
2N50

1.4. 2n5060 2n5062 2n5061 2n5064.pdf Size:110K _motorola

2N50
2N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5060/D 2N5060 2N5061 * Silicon Controlled Rectifiers 2N5062 Reverse Blocking Triode Thyristors * 2N5064 *Motorola preferred d

 1.5. mtd2n50erev1x.pdf Size:299K _motorola

2N50
2N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2N50E/D Designer's Data Sheet TMOS E-FET. MTD2N50E Motorola Preferred Device Power Field Effect Transistor DPAK for Surface M

1.6. 2n5088 2n5089.pdf Size:281K _motorola

2N50
2N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5088/D Amplifier Transistors NPN Silicon 2N5088 2N5089 COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS CASE 29 04,

1.7. mtp2n50e.pdf Size:244K _motorola

2N50
2N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTP2N50E/D Designer's Data Sheet MTP2N50E TMOS E-FET. Motorola Preferred Device Power Field Effect Transistor N Channel Enhance

1.8. mtd2n50e.pdf Size:255K _motorola

2N50
2N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MTD2N50E/D Designer's Data Sheet TMOS E-FET. MTD2N50E Motorola Preferred Device Power Field Effect Transistor DPAK for Surface M

1.9. 2n5086 2n5087.pdf Size:434K _motorola

2N50
2N50

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5086/D Amplifier Transistors 2N5086 PNP Silicon * 2N5087 *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3

1.10. 2n5088 3.pdf Size:49K _philips

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2N50

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5088 NPN general purpose transistor 1997 Sep 03 Product specification Supersedes data of 1997 Jul 03 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification NPN general purpose transistor 2N5088 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 30 V). 1 co

1.11. 2n5087 cnv 2.pdf Size:49K _philips

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5087 PNP general purpose transistor Product specification 1997 Jul 02 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP general purpose transistor 2N5087 FEATURES PINNING • Low current (max. 100 mA) PIN DESCRIPTION • Low voltage (max. 50 V). 1

1.12. phx2n50e.pdf Size:85K _philips

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Philips Semiconductors Product specification PowerMOS transistors PHX2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 1.4 A g • Isolated package RDS(ON) ≤ 5 Ω s GENERAL DESCRIPTION PINNING SOT186A N-channel, enhan

1.13. php2n50 1.pdf Size:56K _philips

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Philips Semiconductors Product specification PowerMOS transistor PHP2N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 500 V avalanche energy capability, stable ID Drain current (DC) 2 A off-state characteristics, fast Ptot Total power dissipation

1.14. phu2n50e 1.pdf Size:64K _philips

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Philips Semiconductors Product specification PowerMOS transistors PHU2N50E Avalanche energy rated FEATURES QUICK REFERENCE DATA • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 2 A • Low thermal resistance • Extremely high dV/dt capability RDS(ON) ≤ 5 Ω GENERAL DESCRIPTION N-channe

1.15. phb2n50 1.pdf Size:59K _philips

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Philips Semiconductors Product specification PowerMOS transistor PHB2N50 GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode SYMBOL PARAMETER MAX. UNIT field-effect power transistor in a plastic envelope suitable for surface VDS Drain-source voltage 500 V mounting featuring high avalanche ID Drain current (DC) 2 A energy capability, stable off-state Ptot Total power dis

1.16. php2n50e 3.pdf Size:74K _philips

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Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 2 A g • Low thermal resistance RDS(ON) ≤ 5 Ω s GENERAL DESCRIPTION N-channe

1.17. php2n50e phb2n50e phd2n50e.pdf Size:73K _philips

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Philips Semiconductors Product specification PowerMOS transistors PHP2N50E, PHB2N50E, PHD2N50E Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d • Repetitive Avalanche Rated • Fast switching VDSS = 500 V • Stable off-state characteristics • High thermal cycling performance ID = 2 A g • Low thermal resistance RDS(ON) ≤ 5 Ω s GENERAL DESCRIPTION N-channe

1.18. stf12n50m2.pdf Size:660K _st

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STF12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220FP package Datasheet - preliminary data Features Order code VDS RDS(on) max ID STF12N50M2 500 V 0.38 Ω 10 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation 3 2 • Low gate input resistance 1 • 100% avalanche tested TO-220FP • Zener-protected Appli

1.19. std12n50m2.pdf Size:748K _st

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STD12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID STD12N50M2 500 V 0.38 Ω 10 A TAB • Extremely low gate charge 3 • Excellent output capacitance (COSS) profile 1 • 100% avalanche tested DPAK • Zener-protected Applications • Switching applications Figure 1. Int

1.20. 2n5038.pdf Size:42K _st

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2N5038 ® HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching 1 applications. 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VCBO Collect

1.21. std2n50.pdf Size:174K _st

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STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD2N50 500 V < 5.5 Ω 2 A TYPICAL R = 4.5 Ω DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX ”-1”) SURFACE-MOUNTING DPAK (TO-252) I

1.22. stp12n50m2.pdf Size:618K _st

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STP12N50M2 N-channel 500 V, 0.325 Ω typ.,10 A MDmesh II Plus™ low Qg Power MOSFET in a TO-220 package Datasheet - preliminary data Features Order code VDS RDS(on) max ID TAB STP12N50M2 500 V 0.38 Ω 10 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation 3 • Low gate input resistance 2 1 • 100% avalanche tested TO-220 • Zener-protected Appl

1.23. 2n5086 2n5087 mmbt5087.pdf Size:100K _fairchild_semi

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2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier 3 • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 2 SOT-23 TO-92 1 Mark: 2Q 1 1. Emitter 2. Base 3. Collector 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol Parameter Value Units VCEO Collect

1.24. fqnl2n50bbu fqnl2n50bta.pdf Size:596K _fairchild_semi

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March 2001 TM QFET FQNL2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.35A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology has been especially tailo

1.25. fqb12n50tm am002 fqi12n50tu.pdf Size:616K _fairchild_semi

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TM QFET FQB12N50 / FQI12N50 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 12.1A, 500V, RDS(on) = 0.49Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 39 nC) planar stripe, DMOS technology. • Low Crss ( typical 25 pF) This advanced technology has been especially tailored

1.26. fdp12n50 fdpf12n50.pdf Size:446K _fairchild_semi

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June 2007 UniFETTM FDP12N50 / FDPF12N50 tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 22nC) stripe, DMOS technology. • Low Crss ( Typ. 11pF) This advanced technology has be

1.27. fdb12n50f.pdf Size:602K _fairchild_semi

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November 2007 UniFETTM FDB12N50F tm N-Channel MOSFET, FRFET 500V, 11.5A, 0.7Ω Features Description • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 21nC) DMOS technology. • Low Crss ( Typ. 11pF) This advance technology has b

1.28. fdp12n50f fdpf12n50ft.pdf Size:695K _fairchild_semi

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December 2007 UniFETTM FDP12N50F / FDPF12N50FT tm N-Channel MOSFET 500V, 11.5A, 0.7Ω Features Description • RDS(on) = 0.59Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 21nC) DMOS technology. • Low Crss ( Typ. 11pF) This advance technolog

1.29. fdp12n50u fdpf12n50ut.pdf Size:646K _fairchild_semi

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November 2007 Ultra FRFETTM FDP12N50U / FDPF12N50UT tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 21nC) DMOS technology. • Low Crss ( Typ. 11pF) This advance

1.30. fdp22n50n.pdf Size:557K _fairchild_semi

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April 2009 UniFETTM FDP22N50N N-Channel MOSFET 500V, 22A, 0.22Ω Features Description • RDS(on) = 0.185Ω ( Typ.)@ VGS = 10V, ID = 11A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 49nC) stripe, DMOS technology. • Low Crss ( Typ. 24pF) This advanced technology has been especiall

1.31. fqu2n50btu.pdf Size:598K _fairchild_semi

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May 2000 TM QFET QFET QFET QFET FQD2N50B / FQU2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology

1.32. fqp2n50.pdf Size:712K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.1A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology has been

1.33. fqnl2n50b.pdf Size:598K _fairchild_semi

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March 2001 TM QFET FQNL2N50B 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 0.35A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology has been especially tailo

1.34. fdb12n50u.pdf Size:643K _fairchild_semi

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March 2008 TM Ultra FRFET FDB12N50U tm N-Channel MOSFET, FRFET 500V, 10A, 0.8Ω Features Description • RDS(on) = 0.65Ω ( Typ.)@ VGS = 10V, ID = 5A These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild’s proprietary, planar stripe, • Low gate charge ( Typ. 21nC) DMOS technology. • Low Crss ( Typ. 11pF) This advance technology has

1.35. 2n5088 mmbt5088 2n5089 mmbt5089.pdf Size:97K _fairchild_semi

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2N5088 MMBT5088 2N5089 MMBT5089 C E C TO-92 B B SOT-23 E Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 2N5088 30 V 2N5089 25 V VCBO

1.36. fqd2n50tf fqd2n50tm.pdf Size:714K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQD2N50 / FQU2N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.6A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technolog

1.37. fdpf12n50nzt.pdf Size:370K _fairchild_semi

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October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS(on) = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 23nC ) stripe, DMOS technology. • Low Crss ( Typ. 14pF ) This advanced tech

1.38. fqpf2n50.pdf Size:711K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 1.3A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technology has bee

1.39. fdb12n50tm.pdf Size:2875K _fairchild_semi

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June 2007 UniFETTM FDB12N50TM tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS(on) = 0.55Ω ( Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 22nC) stripe, DMOS technology. • Low Crss ( Typ. 12pF) This advanced technology has been especi

1.40. fdp12n50 fdpf12n50t.pdf Size:535K _fairchild_semi

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May 2012 UniFETTM FDP12N50 / FDPF12N50T tm N-Channel MOSFET 500V, 11.5A, 0.65Ω Features Description • RDS(on) = 0.55Ω (Typ.)@ VGS = 10V, ID = 6A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 22nC) stripe, DMOS technology. • Low Crss ( Typ. 11pF) This advanced technology has be

1.41. fqb2n50tm.pdf Size:720K _fairchild_semi

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April 2000 TM QFET QFET QFET QFET FQB2N50 / FQI2N50 500V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 2.1A, 500V, RDS(on) = 5.3Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 6.0 nC) planar stripe, DMOS technology. • Low Crss ( typical 4.0 pF) This advanced technolog

1.42. fqu2n50b.pdf Size:731K _fairchild_semi

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November 2013 FQU2N50B N-Channel QFET® MOSFET 500 V, 1.6 A, 5.3 Ω Description Features This N-Channel enhancement mode power MOSFET is • 1.6 A, 500 V, RDS(on) = 5.3 Ω (Max.) @ VGS = 10 V, produced using Fairchild Semiconductor’s proprietary ID = 0.8 A planar stripe and DMOS technology. This advanced • Low Gate Charge (Typ. 6.0 nC) MOSFET technology has been especially tailo

1.43. fdp12n50nz fdpf12n50nz.pdf Size:377K _fairchild_semi

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October 2010 UniFET-IITM FDP12N50NZ / FDPF12N50NZ N-Channel MOSFET 500V, 11.5A, 0.52Ω Features Description • RDS(on) = 0.46Ω ( Typ. ) @ VGS = 10V, ID = 5.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar • Low gate charge ( Typ. 23nC ) stripe, DMOS technology. • Low Crss ( Typ. 14pF ) This advanced tech

1.44. irfp32n50k.pdf Size:94K _international_rectifier

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PD - 94099A IRFP32N50K SMPS MOSFET HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135Ω 32A Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterize

1.45. irfp22n50apbf.pdf Size:206K _international_rectifier

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PD - 95004 IRFP22N50APbF SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply (SMPS) l UninterruptIble Power Supply 500V 0.23Ω 22A l High Speed Power Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalan

1.46. irfp32n50kpbf.pdf Size:202K _international_rectifier

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PD - 95052 IRFP32N50KPbF SMPS MOSFET HEXFET® Power MOSFET AppIications l Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID l Uninterruptible Power Supply l High Speed Power Switching 500V 0.135Ω 32A l Hard Switched and High Frequency Circuits l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggednes

1.47. irfba32n50k.pdf Size:41K _international_rectifier

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PD- 93924 PROVISIONAL IRFBA32N50K SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) ID Telecom and Data-Com off-Line SMPS UninterruptIble Power Supply 500V 0.14Ω 32A Benefits Low On-Resistance High Speed Switching Low Gate Drive Current Due to Improved Gate Charge Characteristics Improved Avalanche Ruggedness and Dynamic dv/dt, Fully Characterized Avalanche Vo

1.48. irfba22n50a.pdf Size:106K _international_rectifier

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PD-91866B IRFBA22N50A SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptible Power Supply 500V 0.23Ω 24A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curr

1.49. irfbl12n50a.pdf Size:175K _international_rectifier

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PD - 91818A SMPS MOSFET IRFBL12N50A HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.45Ω 13A High Speed Power Switching Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Super-D2PakTM Avalanche V

1.50. irfp22n50a.pdf Size:103K _international_rectifier

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PD- 91833C SMPS MOSFET IRFP22N50A HEXFET® Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) UninterruptIble Power Supply 500V 0.23Ω 22A High Speed Power Switching Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Curren

1.51. irfba22n50apbf.pdf Size:130K _international_rectifier

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PD-91886C IRFBA22N50A SMPS MOSFET HEXFET® Power MOSFET Applications VDSS RDS(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptible Power Supply 500V 0.23Ω 24A l High Speed Power Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage an

1.52. irfp32n50ks.pdf Size:115K _international_rectifier

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PD - 94360 IRFP32N50KS SMPS MOSFET HEXFET® Power MOSFET Applications Switch Mode Power Supply (SMPS) VDSS RDS(on)typ. ID Uninterruptible Power Supply High Speed Power Switching 500V 0.135Ω 32A Hard Switched and High Frequency Circuits Benefits Low Gate Charge Qg results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterize

1.53. 2n5088-2n5089.pdf Size:58K _samsung

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2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC (max)=625mW ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit Collector-Base Voltage :2N5088 VCBO 2N5089 30 V Collector-Emitter Voltage :2N5088 VCEO 30 V 2N5089 25 V Emitter-Base Voltage VEBO 4.5 V

1.54. ssh22n50a.pdf Size:220K _samsung

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SSH22N50A Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.25 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 22 A Improved Gate Charge Extended Safe Operating Area TO-3P Lower Leakage Current : 10 µA (Max.) @ VDS = 500V Lower RDS(ON) : 0.197 Ω (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol C

1.55. rdd022n50.pdf Size:604K _rohm

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RDD022N50 Nch 500V 2A Power MOSFET Datasheet lOutline VDSS 500V CPT3 (SC-63) RDS(on) (Max.) 5.4W (SOT-428) ID 2A (1) (2) (3) PD 20W lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. *1 BODY DIODE 5) Parallel use is easy.

1.56. sihg32n50d.pdf Size:179K _vishay

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SiHG32N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.150 - Low Input Capacitance (Ciss) Qg max. (nC) 96 - Reduced Capacitive Switching Losses Qgs (nC) 18 - High Body Diode Ruggedness Qgd (nC) 29 - Avalanche Energy Rated (UIS)

1.57. sihd12n50e.pdf Size:185K _vishay

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SiHD12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.58. sihb12n50e.pdf Size:200K _vishay

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SiHB12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.59. irfp32n50k sihfp32n50k.pdf Size:170K _vishay

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2N50

IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.135 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Con

1.60. sihp12n50e.pdf Size:158K _vishay

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SiHP12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.61. irfp22n50a sihfp22n50a.pdf Size:306K _vishay

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2N50

IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ()VGS = 10 V 0.23 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 32 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 52 and Current Con

1.62. sihp12n50c sihb12n50c sihf12n50c.pdf Size:154K _vishay

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SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) (Ω)VGS = 10 V 0.555 • 100 % Avalanche Tested Qg (Max.) (nC) 48 • Gate Charge Improved Qgs (nC) 12 • Trr/Qrr Improved Qgd (nC) 15 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

1.63. sihb12n50c sihf12n50c sihp12n50c.pdf Size:179K _vishay

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SiHP12N50C, SiHB12N50C, SiHF12N50C Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Figure-of-Merit Ron x Qg VDS (V) at TJ max. 560 V RDS(on) (Ω)VGS = 10 V 0.555 • 100 % Avalanche Tested Qg (Max.) (nC) 48 • Gate Charge Improved Qgs (nC) 12 • Trr/Qrr Improved Qgd (nC) 15 Configuration Single • Compliant to RoHS Directive 2002/95/EC TO-220AB TO-220 FULLPAK

1.64. siha12n50e.pdf Size:164K _vishay

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SiHA12N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY • Low figure-of-merit (FOM) Ron x Qg VDS (V) at TJ max. 550 • Low input capacitance (Ciss) RDS(on) max. at 25 °C (Ω) VGS = 10 V 0.380 • Reduced switching and conduction losses Qg max. (nC) 50 • Low gate charge (Qg) Qgs (nC) 6 • Avalanche energy rated (UIS) Qgd (nC) 10 • Materi

1.65. irfp22n50apbf sihfp22n50a.pdf Size:311K _vishay

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IRFP22N50A, SiHFP22N50A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) ()VGS = 10 V 0.23 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 120 COMPLIANT Ruggedness Qgs (nC) 32 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 52 and Current Con

1.66. irfp32n50k irfp32n50kpbf sihfp32n50k.pdf Size:175K _vishay

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2N50

IRFP32N50K, SiHFP32N50K Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY • Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Available Requirement RDS(on) (Ω)VGS = 10 V 0.135 RoHS* • Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 190 COMPLIANT Ruggedness Qgs (nC) 59 • Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 84 and Current Con

1.67. sihg22n50d.pdf Size:180K _vishay

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SiHG22N50D www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY • Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 °C () VGS = 10 V 0.230 - Low Input Capacitance (Ciss) Qg max. (nC) 98 - Reduced Capacitive Switching Losses Qgs (nC) 13 - High Body Diode Ruggedness Qgd (nC) 22 - Avalanche Energy Rated (UIS)

1.68. 2n5022 2n5023.pdf Size:73K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.69. 2n5088 2n5089.pdf Size:66K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.70. 2n5058 2n5059.pdf Size:81K _central

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2N50

145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.71. 2n5086 2n5087.pdf Size:60K _central

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145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824

1.72. zxt12n50dx.pdf Size:261K _diodes

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2N50

ZXT12N50DX SuperSOT4™ DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 45m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. MSOP8

1.73. spb12n50c3.pdf Size:1694K _infineon

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2N50

SPB12N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.38 Ω • New revolutionary high voltage technology ID 11.6 A • Ultra low gate charge PG-TO263 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance - Type Package Ordering Code Marking 12N50C3 SPB12N50C3 PG-TO263 Q67040-S4641 Maximum

1.74. spw52n50c3.pdf Size:609K _infineon

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2N50

SPW52N50C3 CoolMOS™ Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.07 Ω • New revolutionary high voltage technology ID 52 A • Worldwide best RDS(on) in TO-247 PG-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Marking SPW52N50C3 PG-TO247 52N50C3 Maxim

1.75. spw32n50c3.pdf Size:822K _infineon

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2N50

SPW32N50C3 Cool MOS™ Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.11 Ω • New revolutionary high voltage technology ID 32 A • Ultra low gate charge PG-TO247 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance Type Package Ordering Code Marking SPW32N50C3 PG-TO247 Q67040-S4613 32N50C3 Maximum Rating

1.76. spw12n50c3.pdf Size:763K _infineon

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2N50

 VDS Tjmax Ω • • G • • • • G

1.77. spd02n50c3.pdf Size:630K _infineon

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2N50

 VDS Tjmax Ω • • G 2 • • • • G

1.78. ixth12n50a ixtm12n50a.pdf Size:62K _ixys

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VDSS ID25 RDS(on) Standard Ω IXTH 12 N50A 500 V 12 A 0.4 Ω Ω Ω Ω Power MOSFET Ω IXTM 12 N50A 500 V 12 A 0.4 Ω Ω Ω Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V D (TAB) VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C12 A IDM TC

1.79. ixth12n45 ixth12n45a ixth12n50 ixtm12n45 ixtm12n45a ixtm12n50.pdf Size:65K _ixys

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1.80. ixth22n50p ixtq22n50p ixtv22n50p.pdf Size:198K _ixys

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IXTH 22N50P VDSS = 500 V PolarHVTM IXTQ 22N50P ID25 = 22 A Power MOSFET IXTV 22N50P RDS(on) ≤ Ω ≤ Ω ≤ 270 mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode IXTV 22N50PS Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings G (TAB) D VDSS TJ = 25°C to 150°C 500 V S VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±30 V TO-3P (IXTQ) VGSM Trans

1.81. mmix1f132n50p3.pdf Size:182K _ixys

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2N50

Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V MMIX1F132N50P3 Power MOSFET ID25 = 63A ≤ Ω RDS(on) ≤ 43mΩ ≤ Ω ≤ Ω ≤ Ω ≤ (Electrically Isolated Tab) trr ≤ 250ns ≤ ≤ ≤ D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V Isolated Tab VDGR TJ =

1.82. ixfl132n50p3.pdf Size:144K _ixys

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2N50

Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V IXFL132N50P3 Power MOSFET ID25 = 63A ≤ Ω RDS(on) ≤ 43mΩ ≤ Ω ≤ Ω ≤ Ω ≤ (Electrically Isolated Tab) trr ≤ 250ns ≤ ≤ ≤ N-Channel Enhancement Mode Avalanche Rated ISOPLUS264 Fast Intrinsic Rectifier Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V G VDGR TJ = 25°C to 15

1.83. ixtn62n50l.pdf Size:84K _ixys

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Preliminary Technical Information IXTN62N50L VDSS = 500 V Linear Power MOSFET ID25 = 62 A With Extended FBSOA D ≤ Ω RDS(on) ≤ 0.1 Ω ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode G S S Symbol Test Conditions Maximum Ratings miniBLOC, SOT-227 B (IXTN) E153432 VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V S G VGS Continuous ±30 V VGSM

1.84. ixft52n50p2 ixfh52n50p2.pdf Size:127K _ixys

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2N50

Advance Technical Information PolarP2TM HiperFETTM VDSS = 500V IXFH52N50P2 ID25 = 52A Power MOSFET IXFT52N50P2 ≤ Ω RDS(on) ≤ Ω ≤ 120mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated TO-247 (IXFH) Fast Intrinsic Diode G D D (Tab) S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V TO-268 (IXFT) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 50

1.85. ixfr30n50q ixfr32n50q.pdf Size:91K _ixys

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2N50

VDSS ID25 RDS(on) HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q 500 V 29 A 0.16 W IXFR 32N50Q 500 V 30 A 0.15 W (Electrically Isolated Back Surface) trr £ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data ISOPLUS 247TM Symbol Test Conditions Maximum Ratings E 153432 VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V

1.86. ixfk32n50q ixfx32n50q.pdf Size:573K _ixys

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2N50

VDSS ID25 RDS(on) IXFK 32N50Q HiPerFETTM IXFX 32N50Q Ω 500 V 32 A 0.16 Ω Ω Ω Power MOSFETs Ω Ω 500 V 32 A 0.16 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings PLUS 247TM (IXFX) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ

1.87. ixtb62n50l.pdf Size:109K _ixys

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Preliminary Technical Information IXTB62N50L VDSS = 500 V Linear Power MOSFET ID25 = 62 A With Extended FBSOA ≤ Ω RDS(on) ≤ 0.1 Ω ≤ Ω ≤ Ω ≤ Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings PLUS 264TM (IXTB) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 62

1.88. ixfj32n50q.pdf Size:89K _ixys

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VDSS = 500 V IXFJ 32N50Q HiPerFETTM ID(cont) = 32 A Power MOSFETs RDS(on) = 0.15 W Q-Class trr < 250 ns N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V G VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V D é S VGS Continuous ±20 V (TAB) VGSM Transient ±3

1.89. ixfh30n50 ixfh32n50 ixft30n50 ixft32n50.pdf Size:110K _ixys

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VDSS ID25 RDS(on) HiPerFETTM IXFH/IXFT 30N50 500 V 30 A 0.16 W Power MOSFETs IXFH/IXFT 32N50 500 V 32 A 0.15 W N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr £ 250 ns TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V D (TAB) ID25 TC

1.90. ixfh22n50p ixfv22n50p.pdf Size:312K _ixys

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IXFH 22N50P VDSS = 500 V PolarHVTM HiPerFET IXFV 22N50P ID25 = 22 A Power MOSFET IXFV 22N50PS RDS(on) ≤ 270 mΩ ≤ Ω ≤ Ω ≤ Ω ≤ Ω ≤ trr ≤ 200 ns ≤ ≤ ≤ N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 AD (IXFH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25° C to 150° C 500 V VDGR TJ = 25° C to 150° C; RGS = 1 MΩ 500

1.91. ixtp02n50d ixtu02n50d ixty02n50d.pdf Size:94K _ixys

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IXTP 02N50D VDSS = 500 V High Voltage MOSFET IXTU 02N50D ID25 = 200 mA N-Channel, Depletion Mode IXTY 02N50D Ω RDS(on) = 30 Ω Ω Ω Ω Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C 500 V VGS Continuous ± 20 V D (TAB) VGSM Transient ± 30 V G D S IDSS TC = 25°C; TJ = 25°C to 150°C

1.92. ixti12n50p.pdf Size:157K _ixys

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VDSS = 500V PolarTM Power MOSFET IXTA12N50P ID25 = 12A IXTI12N50P ≤ Ω RDS(on) ≤ 500mΩ ≤ Ω ≤ Ω ≤ Ω IXTP12N50P N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings G VDSS TJ = 25°C to 150°C 500 V S (TAB) VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V Leaded TO-263 (IXTI) ID25

1.93. ixfh42n50p2 ixft42n50p2.pdf Size:127K _ixys

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2N50

Advance Technical Information PolarP2TM HiperFETTM VDSS = 500V IXFH42N50P2 ID25 = 42A Power MOSFET IXFT42N50P2 ≤ Ω RDS(on) ≤ Ω ≤ 145mΩ ≤ Ω ≤ Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode TO-247 (IXFH) G D Symbol Test Conditions Maximum Ratings D (Tab) S VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 500 V TO-268 (IXF

1.94. ixfh32n50q ixft32n50q.pdf Size:567K _ixys

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2N50

IXFH 32N50Q VDSS ID25 RDS(on) HiPerFETTM IXFT 32N50Q Power MOSFETs Ω 500 V 32 A 0.16 Ω Ω Ω Ω Ω 500 V 32 A 0.16 Ω Ω Ω Ω Q-Class ≤ trr ≤ ≤ 250 ns ≤ ≤ N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings TO-247 AD (IXFH) VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 50

1.95. 2n5087-d.pdf Size:155K _onsemi

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2N50

2N5087 Preferred Device Amplifier Transistor PNP Silicon Features • Pb-Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 2

1.96. 2n5088g.pdf Size:83K _onsemi

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2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Conti

1.97. 2n5089g.pdf Size:83K _onsemi

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2N50

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Conti

1.98. 2n5088 2n5089.pdf Size:83K _onsemi

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2N50

2N5088, 2N5089 Amplifier Transistors NPN Silicon Features http://onsemi.com • Pb-Free Packages are Available* 3 COLLECTOR 2 MAXIMUM RATINGS BASE Rating Symbol Value Unit Collector - Emitter Voltage VCEO Vdc 1 EMITTER 2N5088 30 2N5089 25 Collector - Base Voltage VCBO Vdc 2N5088 35 TO-92 2N5089 30 CASE 29 Emitter - Base Voltage VEBO 3.0 Vdc STYLE 1 Collector Current - Conti

1.99. 2n5087g.pdf Size:156K _onsemi

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2N5087 Preferred Device Amplifier Transistor PNP Silicon Features • Pb-Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 2

1.100. 2n5038.pdf Size:79K _onsemi

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2N50

2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http://onsemi.com • High Speed - tf = 0.5 ms (Max) • High Current - IC(max) = 30 Amps 20 AMPERE • Low Saturation - VCE(sat) = 2.5 V (Max)

1.101. 2n5038g.pdf Size:79K _onsemi

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2N50

2N5038 NPN Silicon Transistors Fast switching speeds and high current capacity ideally suit these parts for use in switching regulators, inverters, wide-band amplifiers and power oscillators in industrial and commercial applications. Features http://onsemi.com • High Speed - tf = 0.5 ms (Max) • High Current - IC(max) = 30 Amps 20 AMPERE • Low Saturation - VCE(sat) = 2.5 V (Max)

1.102. 2n5060.pdf Size:127K _onsemi

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2N50

2N5060 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate http://onsemi.com drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive plastic TO-226AA (TO-92) package SCRs which

1.103. 2n5087rlrag.pdf Size:156K _onsemi

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2N50

2N5087 Preferred Device Amplifier Transistor PNP Silicon Features • Pb-Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS 2 BASE Rating Symbol Value Unit Collector-Emitter Voltage VCEO 50 Vdc 1 EMITTER Collector-Base Voltage VCBO 50 Vdc Emitter-Base Voltage VEBO 3.0 Vdc Collector Current - Continuous IC 50 mAdc TO-92 Total Device Dissipation @ TA = 2

1.104. 2n50.pdf Size:167K _utc

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2N50

UNISONIC TECHNOLOGIES CO., LTD 2N50 Power MOSFET Preliminary 2 Amps, 500 Volts N-CHANNEL POWER MOSFET DESCRIPTION 1 TO-220F The UTC 2N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstan

1.105. 12n50.pdf Size:214K _utc

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2N50

UNISONIC TECHNOLOGIES CO., LTD 12N50 Power MOSFET 12A, 500V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the av

1.106. fmc12n50es.pdf Size:510K _fuji

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2N50

FMC12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.

1.107. fml12n50es.pdf Size:278K _fuji

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2N50

http://www.fujisemi.com FML12N50ES FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TFP 9.0±0.2 7.0±0.2 0.4±0.1 Lower R (on) characteristic DS 4 More controllable switching dv/dt by gate resistance 4 D Smaller V ringing waveform during switching GS Narrow

1.108. fmp12n50es.pdf Size:478K _fuji

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2N50

FMP12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.5V

1.109. fmv12n50e.pdf Size:374K _fuji

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2N50

FMV12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F(SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.

1.110. fmv12n50es.pdf Size:487K _fuji

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2N50

FMV12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220F (SLS) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.

1.111. fmi12n50e.pdf Size:448K _fuji

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2N50

FMI12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.112. fmi12n50es.pdf Size:507K _fuji

2N50
2N50

FMI12N50ES FUJI POWER MOSFET Super FAP-E3S series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack (L) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.7±0.

1.113. fmp12n50e.pdf Size:444K _fuji

2N50
2N50

FMP12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise TO-220AB Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.114. fmc12n50e.pdf Size:452K _fuji

2N50
2N50

FMC12N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Equivalent circuit schematic Maintains both low power loss and low noise T-Pack(S) Lower R (on) characteristic DS More controllable switching dv/dt by gate resistance Drain(D) Smaller V ringing waveform during switching GS Narrow band of the gate threshold voltage (3.0±0.5V)

1.115. 2n4901-03 2n5067-69.pdf Size:171K _mospec

2N50
2N50

A A A A

1.116. mtp2n50e.pdf Size:26K _no

2N50
2N50

PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 TYPE: MTP2N50E PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain – Source Voltage VDSS 500 Vdc Drain – Gate Voltage VDGR 500 Vdc Drain Current – Continuous ID 2

1.117. 2n5011.pdf Size:11K _semelab

2N50

2N5011 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 600V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

1.118. 2n5099.pdf Size:11K _semelab

2N50

2N5099 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 550V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.119. 2n5052smd.pdf Size:10K _semelab

2N50

2N5052SMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 200V IC = 2A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

1.120. 2n5012.pdf Size:11K _semelab

2N50

2N5012 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 700V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

1.121. 2n5095.pdf Size:11K _semelab

2N50

2N5095 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 400V dia. IC = 1A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3

1.122. 2n5015x.pdf Size:84K _semelab

2N50
2N50

2N5015X 2N5015SX MECHANICAL DATA HIGH VOLTAGE Dimensions in mm (inches) 8.51 (0.34) 9.40 (0.37) SILICON EPITAXIAL 7.75 (0.305) 8.51 (0.335) NPN TRANSISTOR 6.10 (0.240) 6.60 (0.260) 0.89 max. (0.035) 38.00 (1.5) FEATURES min. 0.41 (0.016) 0.53 (0.021) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR dia. • HIGH BREAKDOWN VOLTAGE • LOW SATURATION VOLTAGE 5.08 (0.20

1.123. 2n5001smd.pdf Size:10K _semelab

2N50

2N5001SMD Dimensions in mm (inches). Bipolar PNP Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar PNP Device. 2 VCEO = 80V IC = 2A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (0

1.124. 2n5015.pdf Size:11K _semelab

2N50

2N5015 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 1000V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100)

1.125. 2n5014.pdf Size:15K _semelab

2N50

2N5014 MECHANICAL DATA Dimensions in mm (inches) SILICON EPITAXIAL NPN TRANSISTOR FEATURES General purpose power transistor for switch- ing and linear applications in a hermetic TO–39 package.

1.126. 2n5013.pdf Size:11K _semelab

2N50

2N5013 Dimensions in mm (inches). Bipolar NPN Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = 800V dia. IC = 0.5A 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1

1.127. 2n5038 2n5039.pdf Size:95K _bocasemi

2N50
2N50

A Boca Semiconductor Corp. (BSC) http://www.bocasemi.com A http://www.bocasemi.com http://www.bocasemi.com

1.128. 2n5088 89.pdf Size:214K _cdil

2N50
2N50

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS 2N5088 2N5089 TO-92 CBE C B E Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS Collector -Base Voltage VCBO 35 30 V Collector -Emitter Voltage VCE0 30 25 V Emitter -Base Voltage VEBO 4.5 V Collector Current- Continuous I

1.129. 2n5020 2n5021.pdf Size:89K _interfet

2N50

Databook.fxp 1/13/99 2:09 PM Page B-18 B-18 01/99 2N5020, 2N5021 P-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Analog Switches Reverse Gate Source & Reverse Gate Drain Voltage – 50 V Continuous Forward Gate Current 50 mA Continuous Device Power Dissipation 500 mW Power Derating 4 mW/°C Storage Temperature Range – 65°C to + 200°C A

1.130. 2n5038 2n5039.pdf Size:92K _jmnic

2N50
2N50

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5038/2N5039 DESCRIPTION ·With TO-3 package ·High current APPLICATIONS ·They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=℃) SYMBOL PARAMETER COND

1.131. 2n5050 2n5051 2n5052.pdf Size:49K _jmnic

2N50
2N50

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5050 2N5051 2N5052 DESCRIPTION · ·With TO-66 package ·High breakdown voltage ·Excellent safe operating area APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute ma

1.132. 2n5067 2n5068 2n5069.pdf Size:41K _jmnic

2N50
2N50

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5067 2N5068 2N5069 DESCRIPTION ·With TO-3 package ·Complement to type 2N4901,2N4902,2N4903 ·Low collector-emitter saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) an

1.133. 2n5018 2n5019.pdf Size:263K _linear-systems

2N50
2N50

2N5018 SERIES SINGLE P-CHANNEL Linear Integrated Systems JFET SWITCH FEATURES DIRECT REPLACEMENT FOR SILICONIX 2N5018 ZERO OFFSET VOLTAGE LOW ON RESISTANCE 75Ω TO-18 ABSOLUTE MAXIMUM RATINGS1 BOTTOM VIEW @ 25 °C (unless otherwise stated) Maximum Temperatures G 2 3 D Storage Temperature -55 to 200°C Junction Operating Temperature -55 to 200°C 1 S Maximum Powe

1.134. 2n5012s.pdf Size:55K _microsemi

2N50
2N50

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

1.135. 2n5010s.pdf Size:55K _microsemi

2N50
2N50

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

1.136. 2n5015sx.pdf Size:55K _microsemi

2N50
2N50

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

1.137. 2n5031.pdf Size:83K _microsemi

2N50
2N50

140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 2N5031 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 5mA IC 2 1. Emitter • Maximum Unilateral Gain – 12 dB (typ) @ 400 MHz 2. Base 1 3 3. Collector 4 4. Case TO-72 DESCRIPTION

1.138. msaer12n50a msafr12n50a.pdf Size:44K _microsemi

2N50
2N50

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 MSAER12N50A FAX: (714) 966-5256 MSAFR12N50A Features 500 Volts • Ultrafast rectifier in parallel with the body diode (MSAE type only) 12 Amps • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability 400 mΩ Ω • Hermetically sealed, surface mount power package • Low p

1.139. 2n5014s.pdf Size:55K _microsemi

2N50
2N50

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

1.140. 2n5013s.pdf Size:55K _microsemi

2N50
2N50

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

1.141. 2n5011s.pdf Size:55K _microsemi

2N50
2N50

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/727 DEVICES LEVELS 2N5010 2N5013 2N5010S 2N5013S JAN 2N5011 2N5014 2N5011S 2N5014S JANTX 2N5012 2N5015 2N5012S 2N5015S JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise note

1.142. 12n50a.pdf Size:34K _microsemi

2N50
2N50

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 MSAER12N50A FAX: (714) 966-5256 MSAFR12N50A Features 500 Volts • Ultrafast rectifier in parallel with the body diode (MSAE type only) 12 Amps • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability 400 mΩ Ω • Hermetically sealed, surface mount power package • Low p

1.143. 2n5004.pdf Size:51K _semicoa

2N50
2N50

Data Sheet No. 2N5004 Generic Part Number: Type 2N5004 2N5004 Geometry 9202 Polarity NPN REF: MIL-PRF-19500/534 Qual Level: JAN - JANTXV Features: • Silicon power transistor for use in high speed power switching appli- cations. • Housed in a TO-59 case. • Also available in chip form using the 9202 chip geometry. • The Min and Max limits shown are TO-59 per MIL-PRF-19500

1.144. 2n5003.pdf Size:152K _semicoa

2N50
2N50

Data Sheet No. 2N5003 Generic Part Number: Type 2N5003 2N5003 Geometry 9702 Polarity PNP REF: MIL-PRF-19500/512 Qual Level: JAN - JANTXV Features: • Silicon power transistor for use in high speed power switching appli- cations. • Housed in a TO-59 case. • Also available in chip form using the 9702 chip geometry. • The Min and Max limits shown are TO-59 per MIL-PRF-19500

1.145. 2n5002.pdf Size:51K _semicoa

2N50
2N50

Data Sheet No. 2N5002 Generic Part Number: Type 2N5002 2N5002 Geometry 9202 Polarity NPN REF: MIL-PRF-19500/534 Qual Level: JAN - JANTXV Features: • Silicon power transistor for use in high speed power switching appli- cations. • Housed in a TO-59 case. • Also available in chip form using the 9202 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/534 wh

1.146. 2n5005.pdf Size:153K _semicoa

2N50
2N50

Data Sheet No. 2N5005 Generic Part Number: Type 2N5005 2N5005 Geometry 9702 Polarity PNP REF: MIL-PRF-19500/512 Qual Level: JAN - JANTXV Features: • Silicon power transistor for use in high speed power switching appli- cations. • Housed in a TO-59 case. • Also available in chip form using the 9702 chip geometry. • The Min and Max limits shown are per MIL-PRF-19500/512 wh

1.147. 2n5038 2n5039.pdf Size:118K _inchange_semiconductor

2N50
2N50

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5038 2N5039 DESCRIPTION ·With TO-3 package ·High speed ·Low collector saturation voltage APPLICATIONS ·They are especially intended for high current and fast switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute max

1.148. irfp32n50k.pdf Size:260K _inchange_semiconductor

2N50
2N50

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRFP32N50K ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

1.149. mtp2n50.pdf Size:204K _inchange_semiconductor

2N50
2N50

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor MTP2N50 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate-S

1.150. 2n5050 2n5051 2n5052.pdf Size:125K _inchange_semiconductor

2N50
2N50

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5050 2N5051 2N5052 DESCRIPTION ·With TO-66 package ·High breakdown voltage ·Excellent safe operating area APPLICATIONS ·Designed for driver circuits,switching and amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolut

1.151. ixtq22n50p.pdf Size:209K _inchange_semiconductor

2N50
2N50

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IXTQ22N50P ·FEATURES ·With TO-3PN packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

1.152. sihd12n50e.pdf Size:262K _inchange_semiconductor

2N50
2N50

Isc N-Channel MOSFET Transistor SiHD12N50E ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

1.153. fdp12n50nz.pdf Size:259K _inchange_semiconductor

2N50
2N50

Isc N-Channel MOSFET Transistor FDP12N50NZ ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-S

1.154. aotf22n50.pdf Size:200K _inchange_semiconductor

2N50
2N50

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOTF22N50 ·FEATURES ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V DSS V Gate

1.155. 2n5067 2n5068 2n5069.pdf Size:117K _inchange_semiconductor

2N50
2N50

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5067 2N5068 2N5069 DESCRIPTION ·With TO-3 package ·Complement to type 2N4901/4902/4903 ·Low collector saturation voltage APPLICATIONS ·For general–purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Col

1.156. spw52n50c3.pdf Size:243K _inchange_semiconductor

2N50
2N50

isc N-Channel MOSFET Transistor SPW52N50C3 ISPW52N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤70mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500

1.157. spw32n50c3.pdf Size:244K _inchange_semiconductor

2N50
2N50

isc N-Channel MOSFET Transistor SPW32N50C3 ISPW32N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤110mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50

1.158. spw12n50c3.pdf Size:244K _inchange_semiconductor

2N50
2N50

isc N-Channel MOSFET Transistor SPW12N50C3 ISPW12N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤380mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved Transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 50

1.159. aok22n50.pdf Size:313K _inchange_semiconductor

2N50
2N50

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOK22N50 ·FEATURES ·With TO-247 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·LCD & PDP TV ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM

1.160. fmv12n50e.pdf Size:201K _inchange_semiconductor

2N50
2N50

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FMV12N50E ·FEATURES ·With TO-220F packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE

1.161. fdpf12n50nz.pdf Size:255K _inchange_semiconductor

2N50
2N50

Isc N-Channel MOSFET Transistor FDPF12N50NZ ·FEATURES ·With TO-220F package ·Low input capacitance and gate charge ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-

1.162. 2n5038.pdf Size:189K _inchange_semiconductor

2N50
2N50

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5038 DESCRIPTION ·High Speed-t = 0.5μs (Max) f ·Low Saturation Voltage- V ≤2.5V@ I = 20A CE(sat) C ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device Performance and reliable operation. APPLICATIONS ·Designed for use in switching regulators, inverters, wide- band amplifiers and power oscillators

1.163. spp12n50c3.pdf Size:248K _inchange_semiconductor

2N50
2N50

isc N-Channel MOSFET Transistor SPP12N50C3,ISPP12N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·New revolutionary high voltage technology ·Ultra low effective capacitance ·ABSOLUTE MAXIMUM

1.164. aok22n50l.pdf Size:231K _inchange_semiconductor

2N50
2N50

isc N-Channel MOSFET Transistor AOK22N50L DESCRIPTION ·Drain Current –I =22A@ T =25℃ D C ·Drain Source Voltage- : V =500V(Min) DSS ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed especially for high voltage,high speed applications, such as off-line switching power supplies , UPS,AC and DC motor controls,relay and sol

1.165. spd02n50c3.pdf Size:241K _inchange_semiconductor

2N50
2N50

isc N-Channel MOSFET Transistor SPD02N50C3, ISPD02N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 500 V

1.166. 12n50.pdf Size:260K _inchange_semiconductor

2N50
2N50

isc N-Channel MOSFET Transistor 12N50 ·FEATURES ·Drain Current I = 12A@ T =25℃ D C ·Drain Source Voltage- : V = 500V(Min) DSS ·Static Drain-Source On-Resistance : R = 0.5Ω(Max) DS(on) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBO

1.167. aot22n50.pdf Size:205K _inchange_semiconductor

2N50
2N50

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOT22N50 ·FEATURES ·With TO-220 packaging ·High speed switching ·Very high commutation ruggedness ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·PFC stages ·Popular AC-DC applications ·Power supply ·Switching applications ·ABS

1.168. h2n5087.pdf Size:49K _hsmc

2N50
2N50

Spec. No. : HE6210 HI-SINCERITY Issued Date : 1998.02.01 Revised Date : 2005.01.20 MICROELECTRONICS CORP. Page No. : 1/5 H2N5087 PNP EPITAXIAL PLANAR TRANSISTOR Description This device was designed for low noise,high gain,general purpose amplifier applications for 1uA to 25mA collector current. TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ...........

1.169. aot22n50l.pdf Size:534K _aosemi

2N50
2N50

AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.26Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

1.170. aotf22n50.pdf Size:534K _aosemi

2N50
2N50

AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.26Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

1.171. aot12n50.pdf Size:433K _aosemi

2N50
2N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.172. aob12n50l.pdf Size:257K _aosemi

2N50
2N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.173. aok22n50.pdf Size:490K _aosemi

2N50
2N50

AOK22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 22A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.26Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.174. aotf12n50.pdf Size:433K _aosemi

2N50
2N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.175. aowf12n50.pdf Size:281K _aosemi

2N50
2N50

AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS The AOW12N50 & AOWF12N50 have been fabricated 600V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.52Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss

1.176. aow12n50.pdf Size:281K _aosemi

2N50
2N50

AOW12N50/AOWF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS The AOW12N50 & AOWF12N50 have been fabricated 600V@150℃ 12A using an advanced high voltage MOSFET process that is ID (at VGS=10V) designed to deliver high levels of performance and < 0.52Ω RDS(ON) (at VGS=10V) robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss

1.177. aok22n50l.pdf Size:436K _aosemi

2N50
2N50

AOK22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOK22N50 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 22A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V) < 0.26Ω applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche

1.178. aot22n50.pdf Size:534K _aosemi

2N50
2N50

AOT22N50/AOTF22N50 500V,22A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is ID (at VGS=10V) 22A designed to deliver high levels of performance and RDS(ON) (at VGS=10V) < 0.26Ω robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss alo

1.179. aob12n50.pdf Size:434K _aosemi

2N50
2N50

AOT12N50/AOB12N50/AOTF12N50 500V, 12A N-Channel MOSFET General Description Product Summary VDS 600V@150℃ The AOT12N50 & AOB12N50 & AOTF12N50 have been fabricated using an advanced high voltage MOSFET ID (at VGS=10V) 12A process that is designed to deliver high levels of RDS(ON) (at VGS=10V) < 0.52Ω performance and robustness in popular AC-DC applications.By providing low RDS(o

1.180. 2n5095 2n5097.pdf Size:91K _ssdi

2N50
2N50



1.181. 2n5006 2n5008.pdf Size:97K _ssdi

2N50
2N50



1.182. 2n5013 2n5014 2n5015.pdf Size:89K _ssdi

2N50
2N50



1.183. 2n4999 2n5001.pdf Size:98K _ssdi

2N50
2N50



1.184. 2n5094 2n5096.pdf Size:95K _ssdi

2N50
2N50



1.185. 2n5045.pdf Size:207K _solitron

2N50
2N50



1.186. kqb2n50.pdf Size:358K _tysemi

2N50
2N50

SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type Transistors SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type Product specification KQB2N50 TO-263 Unit: mm Features 4.57+0.2 -0.2 +0.1 1.27-0.1 2.1A, 500

1.187. mdf12n50bth mdp12n50bth.pdf Size:1149K _magnachip

2N50
2N50

MDP12N50B / MDF12N50B N-Channel MOSFET 500V, 11.5A, 0.65Ω General Description Features The MDP/F12N50B uses advanced Magnachip’s VDS = 500V MOSFET Technology, which provides low on-state ID = 11.5A @VGS = 10V resistance, high switching performance and RDS(ON) ≤ 0.65Ω @VGS = 10V excellent quality. MDP/F12N50B is suitable device for SMPS, high Applications Speed switc

1.188. mdf12n50fth mdp12n50fth.pdf Size:1068K _magnachip

2N50
2N50

 MDP12N50F/MDF12N50F N-Channel MOSFET 500V, 11.5A, 0.7Ω General Description Features These N-channel MOSFET are produced using advanced V = 500V DS MagnaChip’s MOSFET Technology, which provides low on- I = 11.5A @ V = 10V D GS state resistance, high switching performance and excellent R ≤ 0.7Ω @ V = 10V DS(ON) GS quality. Applications These devices are suitable devic

1.189. qm12n50f.pdf Size:325K _ubiq

2N50
2N50

QM12N50F 機密 第 1 頁 2011-07-01 - 1 - N-Ch 500V Fast Switching MOSFETs General Description Product Summery The QM12N50F is the highest performance N-ch MOSFETs with specialized high voltage BVDSS RDSON ID technology, which provide excellent RDSON and 500V 0.52Ω 12A gate charge for most of the SPS, Charger ,Adapter and lighting applications . Applications The QM12N50F m

1.190. cs2n50a4.pdf Size:357K _wuxi_china

2N50
2N50

Silicon N-Channel Power MOSFET R ○ CS2N50 A4 General Description: VDSS 500 V CS2N50 A4, the silicon N-channel Enhanced ID 2 A PD (TC=25℃) 30 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 5.5 Ω which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power s

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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BJT: HTL194 | C3198 | AT41586 | TIP540 | SBT92 | SAP16N | RN2130FV | D71F2T1 | 2T951V | 2T951B | 2T951A | 104NU71 | 103NU71 | 102NU71 | 101NU71 | YZ21 | WT062 | TL142 | TIP3055T | TIP2955T |

 

 

 
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