NTE41 Todos los transistores

 

NTE41 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NTE41

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.2 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Corriente del colector DC máxima (Ic): 0.05 A

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 400

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NTE41 datasheet

 0.1. Size:70K  onsemi
nta4151p nte4151p.pdf pdf_icon

NTE41

NTA4151P, NTE4151P Small Signal MOSFET -20 V, -760 mA, Single P-Channel, Gate Zener, SC-75, SC-89 Features www.onsemi.com Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) V(BR)DSS RDS(on) TYP ID MAX SC-75 Standard Gullwing Package 0.26 W @ -4.5 V ESD Protected Gate These Devices are Pb-Free, Halogen Free/BFR Free and

 0.2. Size:66K  onsemi
nta4151pt1 nta4151p nte4151p.pdf pdf_icon

NTE41

NTA4151P, NTE4151P Small Signal MOSFET -20 V, -760 mA, Single P-Channel, Gate Zener, SC-75, SC-89 Features http //onsemi.com Low RDS(on) for Higher Efficiency and Longer Battery Life Small Outline Package (1.6 x 1.6 mm) V(BR)DSS RDS(on) TYP ID MAX SC-75 Standard Gullwing Package 0.26 W @ -4.5 V ESD Protected Gate -20 V 0.35 W @ -2.5 V -760 mA Pb-Free Packages are

 0.3. Size:72K  onsemi
nta4153n nte4153n nva4153n nve4153n.pdf pdf_icon

NTE41

NTA4153N, NTE4153N, NVA4153N, NVE4153N Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89 http //onsemi.com Features Low RDS(on) Improving System Efficiency V(BR)DSS RDS(on) TYP ID MAX Low Threshold Voltage, 1.5 V Rated 0.127 W @ 4.5 V ESD Protected Gate 0.170 W @ 2.5 V 20 V 915 mA NV Prefix for Automotive and Other Application

 0.4. Size:68K  onsemi
nta4153nt1 nta4153n nte4153n.pdf pdf_icon

NTE41

NTA4153N, NTE4153N Small Signal MOSFET 20 V, 915 mA, Single N-Channel with ESD Protection, SC-75 and SC-89 Features http //onsemi.com Low RDS(on) Improving System Efficiency Low Threshold Voltage, 1.5 V Rated V(BR)DSS RDS(on) TYP ID MAX ESD Protected Gate 0.127 W @ 4.5 V Pb-Free Packages are Available 0.170 W @ 2.5 V 20 V 915 mA Applications 0.242 W @ 1.8 V

Otros transistores... NTE28 , NTE302 , NTE306 , NTE315 , NTE316 , NTE330 , NTE382 , NTE383 , BC558 , NTE42 , NTE43 , NTE44 , NTE45 , NTE46 , NTE48 , NTE97 , NTE98 .

History: 2N6751 | AC110 | 2SA1528 | 2N5140 | 2N1718 | DP350T05

 

 

 


History: 2N6751 | AC110 | 2SA1528 | 2N5140 | 2N1718 | DP350T05

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