OC24 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: OC24
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 16 W
   Tensión colector-base (Vcb): 47 V
   Tensión colector-emisor (Vce): 32 V
   Tensión emisor-base (Veb): 12 V
   Corriente del colector DC máxima (Ic): 1 A
   Temperatura operativa máxima (Tj): 80 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 2 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar OC24

OC24 Datasheet (PDF)

0.1. Size:260K aosemi
aoc2414.pdf

AOC24148V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2414 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)

0.2. Size:256K aosemi
aoc2413.pdf

AOC24138V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2413 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)

0.3. Size:240K aosemi
aoc2422.pdf

AOC24228V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2422 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)

0.4. Size:253K aosemi
aoc2417.pdf

AOC241720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

0.5. Size:252K aosemi
aoc2415.pdf

AOC241520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2415 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.5Awith gate voltages as low as 1.5V while retaining a 8V RDS(ON) (at VGS=-4.5V)

0.6. Size:209K aosemi
aoc2403.pdf

AOC2403 20V P-Channel MOSFETGeneral Description Product SummaryVds -20V ID (at VGS=-4.5V) -1.8AThe AOC2403 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)

0.7. Size:253K aosemi
aoc2421.pdf

AOC24218V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2421 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -2.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)

0.8. Size:251K aosemi
aoc2423.pdf

AOC242320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2423 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -2Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

0.9. Size:223K aosemi
aoc2412.pdf

AOC241220V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AOC2412 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4.5Awith gate voltages as low as 1.8V while retaining a 8V RDS(ON) (at VGS=4.5V)

0.10. Size:256K aosemi
aoc2401.pdf

AOC240130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOC2401 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)

0.11. Size:202K aosemi
aoc2411.pdf

AOC241130V P-Channel MOSFETGeneral Description Product SummaryVds -30V ID (at VGS=-4.5V) -3.4AThe AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: OC81N | CHUMF21GP | 2N4043 | 2SC1913

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050