OC24 Datasheet, Equivalent, Cross Reference Search
Type Designator: OC24
Material of Transistor: Ge
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 16 W
Maximum Collector-Base Voltage |Vcb|: 47 V
Maximum Collector-Emitter Voltage |Vce|: 32 V
Maximum Emitter-Base Voltage |Veb|: 12 V
Maximum Collector Current |Ic max|: 1 A
Max. Operating Junction Temperature (Tj): 80 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 50
Noise Figure, dB: -
Package: TO3
OC24 Transistor Equivalent Substitute - Cross-Reference Search
OC24 Datasheet (PDF)
aoc2414.pdf
AOC24148V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2414 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 4.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)
aoc2413.pdf
AOC24138V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2413 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)
aoc2422.pdf
AOC24228V N-Channel MOSFETGeneral Description Product SummaryVDS8VThe AOC2422 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=2.5V) 3.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=2.5V)
aoc2417.pdf
AOC241720V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2417 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3.5Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)
aoc2415.pdf
AOC241520V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2415 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-4.5V) -3.5Awith gate voltages as low as 1.5V while retaining a 8V RDS(ON) (at VGS=-4.5V)
aoc2403.pdf
AOC2403 20V P-Channel MOSFETGeneral Description Product SummaryVds -20V ID (at VGS=-4.5V) -1.8AThe AOC2403 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)
aoc2421.pdf
AOC24218V P-Channel MOSFETGeneral Description Product SummaryVDS-8VThe AOC2421 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-2.5V) -2.5Awith gate voltages as low as 1.2V while retaining a 5V RDS(ON) (at VGS=-2.5V)
aoc2423.pdf
AOC242320V P-Channel MOSFETGeneral Description Product SummaryVDS-20VThe AOC2423 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -2Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)
aoc2412.pdf
AOC241220V N-Channel MOSFETGeneral Description Product SummaryVDS20VThe AOC2412 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 4.5Awith gate voltages as low as 1.8V while retaining a 8V RDS(ON) (at VGS=4.5V)
aoc2401.pdf
AOC240130V P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AOC2401 uses advanced trench technology toprovide excellent RDS(ON), low gate charge and operation ID (at VGS=-10V) -3Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=-10V)
aoc2411.pdf
AOC241130V P-Channel MOSFETGeneral Description Product SummaryVds -30V ID (at VGS=-4.5V) -3.4AThe AOC2411 uses advanced trench technology to provide RDS(ON) (at VGS=-4.5V)
Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
