P216 Todos los transistores

 0.1. Size:394K  sanyo
 atp216.pdf

ATP216 Ordering number EN8985 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP216 Applications Features ON-resistance RDS(on)1=17m (typ.) Slim package 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 5

 0.2. Size:102K  sanyo
 fp216.pdf

Ordering number EN4919 FP216 NPN Epitaxial Planar Silicon Transistor LCD Backlight Drive Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm PCP5 package currently in use, improving the 2097B mounting efficiency greatly. [FP216] The FP216 is composed of two chips, each being equivalent to the 2SC3646, placed in one package. El

 0.3. Size:703K  fairchild semi
 fjp2160d.pdf

May 2012 FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description High Voltage and High Speed Power Switch The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when Application used in an ESBCTM configuration in applications such as Emitter-Switched Bipolar/MOSFET Cascode power supplies, motor drivers, Smart Grid, o

 0.4. Size:419K  diodes
 dmp2165uw.pdf

 0.5. Size:143K  diodes
 dmp2160ufdb.pdf

DMP2160UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case DFN2020B-6 70m @VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 85m @VGS = -2.5V Moisture Sensitivity Level 1 per J-STD-020

 0.6. Size:128K  diodes
 dmp2160u.pdf

DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max 80 m @ VGS = -4.5V TA = 25 C 100 m @ VGS = -2.5V 80m @ VGS = -4.5V -3.2A 140 m @ VGS = -1.8V -20V Very Low Gate Threshold Voltage VGS(th) 1V 140m @ VGS = -1.8V -2.4A Low Input Capacitance Fast Swit

 0.7. Size:332K  diodes
 dmp2160ufdbq.pdf

DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25 C Low Gate Threshold Voltage, -0.9V Max -3.8A 70m @ VGS = -4.5V Fast Switching Speed -20V 85m @ VGS = -2.5V -3.3A Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compli

 0.8. Size:126K  diodes
 dmp2160uw.pdf

 0.9. Size:1104K  russia
 p216a-b-v-g-d p217a-b-v-g.pdf

 0.10. Size:185K  tysemi
 dmp2160uw.pdf

Product specification DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT323 100m @ VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. 120m @ VGS = -2.5V UL Flammability Classification Rating 94V-0 160m @ VGS = -1.8V Moisture Sensitivity Level 1 per J-STD-020D Very Low Gate

 0.11. Size:2500K  cn tech public
 tpdmp2160uw.pdf

TPDMP21 6 0UW P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering Information Part Number Qty per Reel Reel Size TPDMP2160UW 3000 7 D S G SOT-323 Absolute Maximum Ratings (TA=25 C