P216 Specs and Replacement
Type Designator: P216
Material of Transistor: Ge
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 30 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Emitter-Base Voltage |Veb|: 15 V
Maximum Collector Current |Ic max|: 7.5 A
Max. Operating Junction Temperature (Tj): 75 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 18
Noise Figure, dB: -
- BJT ⓘ Cross-Reference Search
P216 datasheet
0.1. Size:394K sanyo
atp216.pdf 

ATP216 Ordering number EN8985 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device ATP216 Applications Features ON-resistance RDS(on)1=17m (typ.) Slim package 1.8V drive Halogen free compliance Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 5... See More ⇒
0.2. Size:102K sanyo
fp216.pdf 

Ordering number EN4919 FP216 NPN Epitaxial Planar Silicon Transistor LCD Backlight Drive Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm PCP5 package currently in use, improving the 2097B mounting efficiency greatly. [FP216] The FP216 is composed of two chips, each being equivalent to the 2SC3646, placed in one package. El... See More ⇒
0.3. Size:703K fairchild semi
fjp2160d.pdf 

May 2012 FJP2160D ESBCTM Rated NPN Silicon Transistor Applications Description High Voltage and High Speed Power Switch The FJP2160D is a low-cost, high performance power switch designed to provide the best performance when Application used in an ESBCTM configuration in applications such as Emitter-Switched Bipolar/MOSFET Cascode power supplies, motor drivers, Smart Grid, o... See More ⇒
0.5. Size:143K diodes
dmp2160ufdb.pdf 

DMP2160UFDB DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case DFN2020B-6 70m @VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 85m @VGS = -2.5V Moisture Sensitivity Level 1 per J-STD-020 ... See More ⇒
0.6. Size:128K diodes
dmp2160u.pdf 

DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID max V(BR)DSS RDS(ON) max 80 m @ VGS = -4.5V TA = 25 C 100 m @ VGS = -2.5V 80m @ VGS = -4.5V -3.2A 140 m @ VGS = -1.8V -20V Very Low Gate Threshold Voltage VGS(th) 1V 140m @ VGS = -1.8V -2.4A Low Input Capacitance Fast Swit... See More ⇒
0.7. Size:332K diodes
dmp2160ufdbq.pdf 

DMP2160UFDBQ DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) max TA = +25 C Low Gate Threshold Voltage, -0.9V Max -3.8A 70m @ VGS = -4.5V Fast Switching Speed -20V 85m @ VGS = -2.5V -3.3A Low Input/Output Leakage Low Profile, 0.5mm Max Height Totally Lead-Free & Fully RoHS Compli... See More ⇒
0.10. Size:185K tysemi
dmp2160uw.pdf 

Product specification DMP2160UW P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case SOT323 100m @ VGS = -4.5V Case Material Molded Plastic, Green Molding Compound. 120m @ VGS = -2.5V UL Flammability Classification Rating 94V-0 160m @ VGS = -1.8V Moisture Sensitivity Level 1 per J-STD-020D Very Low Gate... See More ⇒
0.11. Size:2500K cn tech public
tpdmp2160uw.pdf 

TPDMP21 6 0UW P-Channel Enhancement-Mode MOS FETs www.sot23.com.tw Features Applications (typ) @VGS =4.5V. -20V, -2.3A, RDS(ON) =100m Battery protection RDS(ON) = 125m (typ) @VGS = 2.5V. Load switch Power management SOT-323 package. Ordering Information Part Number Qty per Reel Reel Size TPDMP2160UW 3000 7 D S G SOT-323 Absolute Maximum Ratings (TA=25 C ... See More ⇒
Detailed specifications: P213, P213A, P213B, P214A, P214B, P214G, P214V, P215, 2SC5198, P216A, P216B, P216D, P216G, P216V, P217, P217A, P217B
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