2N5067 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N5067
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 87 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 5 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 4 MHz
Ganancia de corriente contínua (hFE): 20
Encapsulados: TO3
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2N5067 datasheet
2n5067 2n5068 2n5069.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5067 2N5068 2N5069 DESCRIPTION With TO-3 package Complement to type 2N4901,2N4902,2N4903 Low collector-emitter saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) an
2n5067 2n5068 2n5069.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5067 2N5068 2N5069 DESCRIPTION With TO-3 package Complement to type 2N4901/4902/4903 Low collector saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Col
2n5060 2n5062 2n5061 2n5064.pdf
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5060/D 2N5060 2N5061 * Silicon Controlled Rectifiers 2N5062 Reverse Blocking Triode Thyristors * 2N5064 *Motorola preferred devices . . . Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and SCRs sensing and de
Otros transistores... 2N5057 , 2N5058 , 2N5058S , 2N5059 , 2N5059S , 2N506 , 2N5065 , 2N5066 , D880 , 2N5068 , 2N5069 , 2N507 , 2N5070 , 2N5071 , 2N5072 , 2N5073 , 2N5074 .
History: 2N5059 | 2SA1080 | 2N5065
History: 2N5059 | 2SA1080 | 2N5065
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