2N5067 Specs and Replacement
Type Designator: 2N5067
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 87 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 5 A
Max. Operating Junction Temperature (Tj): 200 °C
Electrical Characteristics
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Package: TO3
2N5067 Substitution
- BJT ⓘ Cross-Reference Search
2N5067 datasheet
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5067 2N5068 2N5069 DESCRIPTION With TO-3 package Complement to type 2N4901,2N4902,2N4903 Low collector-emitter saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) an... See More ⇒
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5067 2N5068 2N5069 DESCRIPTION With TO-3 package Complement to type 2N4901/4902/4903 Low collector saturation voltage APPLICATIONS For general purpose switching and power amplifier applications. PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Col... See More ⇒
2n5060 2n5062 2n5061 2n5064.pdf ![]()
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by 2N5060/D 2N5060 2N5061 * Silicon Controlled Rectifiers 2N5062 Reverse Blocking Triode Thyristors * 2N5064 *Motorola preferred devices . . . Annular PNPN devices designed for high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and SCRs sensing and de... See More ⇒
Detailed specifications: 2N5057, 2N5058, 2N5058S, 2N5059, 2N5059S, 2N506, 2N5065, 2N5066, D880, 2N5068, 2N5069, 2N507, 2N5070, 2N5071, 2N5072, 2N5073, 2N5074
Keywords - 2N5067 pdf specs
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