P304 Datasheet. Equivalente

 ..1. Size:941K  russia
 p302 p303a p304 p306a.pdf

 0.1. Size:53K  philips
 bsp304a.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors 1995 Apr 07 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification P-channel enhancement mode BSP304; BSP304A vertical D-MOS transistors FEATURES DESCRIPTION Direct interface to C-MOS, TTL etc. P-c

 0.2. Size:54K  philips
 bsp304.pdf

DISCRETE SEMICONDUCTORS DATA SHEET BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors 1995 Apr 07 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification P-channel enhancement mode BSP304; BSP304A vertical D-MOS transistors FEATURES DESCRIPTION Direct interface to C-MOS, TTL etc. P-c

 0.3. Size:52K  sanyo
 fp304.pdf

Ordering number ENN4926 TR NPN Epitaxial Planar Silicon Transistor SBD Schottky Barrier Diode FP304 DC-DC Converter Features Package Dimensions Complex type with an NPN transistor and a unit mm Schottoky barrier diode facilitating high-density 2099A mounting. [FP304] The FP304 is composed of 2 chips, one being 4.5 equivalent to the 2SD1620 and the other the SB07- 3.4 2.8

 0.4. Size:378K  siemens
 bup304.pdf

BUP 304 IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 304 1000V 35A TO-218 AB Q67078-A4200-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1000 V Collector-gate voltage VCGR RGE = 20 k 1000 Gate-

 0.5. Size:1340K  onsemi
 fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf

ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,

 0.6. Size:378K  onsemi
 atp304.pdf

Ordering number ENA2192 ATP304 P-Channel Power MOSFET http //onsemi.com -60V, -100A, 6.5m , ATPAK Features On-resistance RDS(on)1=5.0m (typ.) 4.5V drive Input Capacitance Ciss=13000pF(typ.) Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS -60 V Gate to S

 0.7. Size:781K  russia
 kp304a 2p304a.pdf

 0.8. Size:92K  belling
 blvp304.pdf

BLVP304 P MOSFET P MOSFET P MOSFET P MOSFET P VDMOS (T=25 ) (T=25 ) (T=25 )

 0.9. Size:324K  ncepower
 ncep3045bgu.pdf

http //www.ncepower.com NCEP3045BGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP3045BGU uses Super Trench technology that is VDS =30V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=4.4m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=5.3m (typical) @ VGS=4.5V switching power los

 0.10. Size:347K  ncepower
 ncep3045gu.pdf

Pb Free Product http //www.ncepower.com NCEP3045GU NCE N-Channel Super Trench Power MOSFET Description The NCEP3045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

 0.11. Size:325K  ncepower
 ncep3040q.pdf

http //www.ncepower.com NCEP3040Q NCE N-Channel Super Trench Power MOSFET Description The NCEP3040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch