P304 Datasheet and Replacement

DISCRETE SEMICONDUCTORSDATA SHEETBSP304; BSP304AP-channel enhancement modevertical D-MOS transistors1995 Apr 07Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationP-channel enhancement modeBSP304; BSP304Avertical D-MOS transistorsFEATURES DESCRIPTION Direct interface to C-MOS, TTL etc. P-c

DISCRETE SEMICONDUCTORSDATA SHEETBSP304; BSP304AP-channel enhancement modevertical D-MOS transistors1995 Apr 07Product specificationFile under Discrete Semiconductors, SC07Philips SemiconductorsPhilips Semiconductors Product specificationP-channel enhancement modeBSP304; BSP304Avertical D-MOS transistorsFEATURES DESCRIPTION Direct interface to C-MOS, TTL etc. P-c

Ordering number:ENN4926TR:NPN Epitaxial Planar Silicon TransistorSBD:Schottky Barrier DiodeFP304DC-DC ConverterFeatures Package Dimensions Complex type with an NPN transistor and aunit:mmSchottoky barrier diode facilitating high-density2099Amounting.[FP304] The FP304 is composed of 2 chips, one being4.5equivalent to the 2SD1620 and the other the SB07- 3.42.8

BUP 304IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 304 1000V 35A TO-218 AB Q67078-A4200-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 1000 VCollector-gate voltage VCGRRGE = 20 k 1000Gate-

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Ordering number : ENA2192 ATP304 P-Channel Power MOSFEThttp://onsemi.com -60V, -100A, 6.5m, ATPAK Features On-resistance RDS(on)1=5.0m(typ.) 4.5V drive Input Capacitance Ciss=13000pF(typ.) Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Ratings UnitDrain to Source Voltage VDSS -60 V Gate to S

BLVP304 P MOSFET P MOSFETP MOSFETP MOSFET: :: : P VDMOS (T=25) (T=25) (T=25)

http://www.ncepower.com NCEP3045BGUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP3045BGU uses Super Trench technology that is VDS =30V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=4.4m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=5.3m (typical) @ VGS=4.5V switching power los

Pb Free Producthttp://www.ncepower.com NCEP3045GUNCE N-Channel Super Trench Power MOSFET Description The NCEP3045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi

http://www.ncepower.com NCEP3040QNCE N-Channel Super Trench Power MOSFET Description The NCEP3040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch