P304 Specs and Replacement
Type Designator: P304
Material of Transistor: Si
Polarity: PNP
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 5 W
Maximum Collector-Base Voltage |Vcb|: 80 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 0.1 MHz
Forward Current Transfer Ratio (hFE), MIN: 5
Noise Figure, dB: -
- BJT ⓘ Cross-Reference Search
P304 datasheet
0.1. Size:53K philips
bsp304a.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors 1995 Apr 07 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification P-channel enhancement mode BSP304; BSP304A vertical D-MOS transistors FEATURES DESCRIPTION Direct interface to C-MOS, TTL etc. P-c... See More ⇒
0.2. Size:54K philips
bsp304.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BSP304; BSP304A P-channel enhancement mode vertical D-MOS transistors 1995 Apr 07 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Philips Semiconductors Product specification P-channel enhancement mode BSP304; BSP304A vertical D-MOS transistors FEATURES DESCRIPTION Direct interface to C-MOS, TTL etc. P-c... See More ⇒
0.3. Size:52K sanyo
fp304.pdf
Ordering number ENN4926 TR NPN Epitaxial Planar Silicon Transistor SBD Schottky Barrier Diode FP304 DC-DC Converter Features Package Dimensions Complex type with an NPN transistor and a unit mm Schottoky barrier diode facilitating high-density 2099A mounting. [FP304] The FP304 is composed of 2 chips, one being 4.5 equivalent to the 2SD1620 and the other the SB07- 3.4 2.8 ... See More ⇒
0.4. Size:378K siemens
bup304.pdf
BUP 304 IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 304 1000V 35A TO-218 AB Q67078-A4200-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 1000 V Collector-gate voltage VCGR RGE = 20 k 1000 Gate-... See More ⇒
0.5. Size:1340K onsemi
fgb3040g2-f085 fgd3040g2-f085 fgp3040g2-f085 fgi3040g2-f085.pdf
ON Semiconductor Is Now To learn more about onsemi , please visit our website at www.onsemi.com onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks,... See More ⇒
0.6. Size:378K onsemi
atp304.pdf
Ordering number ENA2192 ATP304 P-Channel Power MOSFET http //onsemi.com -60V, -100A, 6.5m , ATPAK Features On-resistance RDS(on)1=5.0m (typ.) 4.5V drive Input Capacitance Ciss=13000pF(typ.) Halogen Free compliance Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Ratings Unit Drain to Source Voltage VDSS -60 V Gate to S... See More ⇒
0.8. Size:92K belling
blvp304.pdf
BLVP304 P MOSFET P MOSFET P MOSFET P MOSFET P VDMOS (T=25 ) (T=25 ) (T=25 ) ... See More ⇒
0.9. Size:324K ncepower
ncep3045bgu.pdf
http //www.ncepower.com NCEP3045BGU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP3045BGU uses Super Trench technology that is VDS =30V,ID =45A uniquely optimized to provide the most efficient high RDS(ON)=4.4m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=5.3m (typical) @ VGS=4.5V switching power los... See More ⇒
0.10. Size:347K ncepower
ncep3045gu.pdf
Pb Free Product http //www.ncepower.com NCEP3045GU NCE N-Channel Super Trench Power MOSFET Description The NCEP3045GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for hi... See More ⇒
0.11. Size:325K ncepower
ncep3040q.pdf
http //www.ncepower.com NCEP3040Q NCE N-Channel Super Trench Power MOSFET Description The NCEP3040Q uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switch... See More ⇒
Detailed specifications: P27A, P28, P29, P29A, P30, P302, P303, P303A, MJE350, P306, P306A, P307, P307A, P307B, P307G, P307V, P308
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