P402
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P402
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.1
W
Tensión colector-base (Vcb): 10
V
Tensión colector-emisor (Vce): 10
V
Tensión emisor-base (Veb): 1
V
Corriente del colector DC máxima (Ic): 0.02
A
Temperatura operativa máxima (Tj): 75
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 60
MHz
Capacitancia de salida (Cc): 10
pF
Ganancia de corriente contínua (hfe): 16
- Selección de transistores por parámetros
P402
Datasheet (PDF)
0.1. Size:127K toshiba
mp4020.pdf 

MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4020 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T
0.2. Size:104K toshiba
mp4024.pdf 

MP4024 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4024 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) Built-in resistance (R ). B Surge voltage is clamped by zener diode (C-B).
0.3. Size:157K toshiba
mp4025 .pdf 

MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4025 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B).
0.4. Size:127K toshiba
mp4021.pdf 

MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4021 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T
0.5. Size:85K toshiba
mp4025.pdf 

MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) MP4025 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pin) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B). Low
0.6. Size:152K toshiba
mp4024 .pdf 

MP4024 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Four Darlington Power Transistors in One) MP4024 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B).
0.7. Size:165K toshiba
mp4021 .pdf 

MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4021 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)
0.8. Size:166K toshiba
mp4020 .pdf 

MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Fourd Darlington Power tTransistors in One) MP4020 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)
0.9. Size:43K sanyo
fp402.pdf 

Ordering number:ENN5048N-Channel MOS Silicon FETFP402Ultrahigh-Speed Switching ApplicaitonsFeatures Package Dimensions Low ON resistance.unit:mm Very high-speed switching.2102A Complex type with 2 low-voltage-drive N-channel[FP402]MOSFETs facilitating high-density mounting.4.53.42.81.5Electrical Connection 0.5 1.8 0.50.46 71.07 6 1:Gate2:Drain
0.10. Size:78K fairchild semi
fdp4020p fdb4020p.pdf 

September 2000FDP4020P/FDB4020PP-Channel 2.5V Specified Enhancement Mode Field Effect TransistorGeneral DescriptionFeatures -16 A, -20 V. RDS(on) = 0.08 @ VGS = -4.5 VThis P-Channel low threshold MOSFET has beenRDS(on) = 0.11 @ VGS = -2.5 V.designed for use as a linear pass element for low voltageoutputs. In addition, the part may be used as a low voltage Criti
0.11. Size:87K siemens
bup402.pdf 

BUP 402IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 402 600V 36A TO-220 AB C67078-A4405-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 600 VEmitter-collector voltage VECCollector-gate voltage VC
0.12. Size:286K diodes
dmp4025lsd.pdf 

A Product Line ofDiodes IncorporatedDMP4025LSD40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max (A) Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25C Fast switching speed Minimizes switching losses 25m @ VGS = -10V -7.6 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -40V 45m @
0.13. Size:263K diodes
dmp4025sfg.pdf 

A Product Line ofDiodes IncorporatedDMP4025SFG40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25C Fast switching speed Minimizes switching losses (Notes 6) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 25m @ VGS = -10V - 7.2A -40V Hal
0.14. Size:187K diodes
dmp4025lss.pdf 

A Product Line ofDiodes IncorporatedDMP4025LSS 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(on) Minimizes conduction losses ID max (A) Fast switching speed Minimizes switching losses V(BR)DSS RDS(on) max TA = 25C Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) (Notes 6) Halogen and Antimony Free. Gr
0.15. Size:254K diodes
dmp4025lk3.pdf 

DMP4025LK340V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max BVDSS RDS(on) max TA = +25C Fast Switching Speed (Note 6) Low Input/Output Leakage 25m @ VGS = -10V -8.6A Lead-Free Finish; RoHS compliant (Note 1 & 2) -40V 45m @ VGS = -4.5V -7.0A Halogen and Antimony Free. Green Device (Note 3) Quali
0.16. Size:143K ape
ap4024eyt.pdf 

AP4024EYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 4.5m RoHS Compliant & Halogen-Free ID 20.7AGS DDDescriptionDDAP4024 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resi
0.17. Size:186K ape
ap4024em.pdf 

AP4024EMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 4.5mD Low On-resistance ID 18.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4024E series are from Advanced Power innovated design andGsilicon process technol
0.18. Size:165K ape
ap4024gemt.pdf 

AP4024GEMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 4.5mG Low On-resistance ID4 60A RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4024 series are from Advanced Power innovated design andsilicon process technology to achie
0.19. Size:251K ape
ap4028eh.pdf 

AP4028EHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-Free DescriptionAP4028 series are from Advanced Power innovated design and siliconGDprocess techno
0.20. Size:147K ape
ap4024ejb.pdf 

AP4024EJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 6mG Fast Switching Characteristic ID 60A RoHS Compliant & Halogen-FreeSDescriptionAP4024 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possi
0.21. Size:202K ape
ap4024eh.pdf 

AP4024EHHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 6mG Fast Switching Characteristic ID 60A RoHS Compliant & Halogen-FreeSDescriptionAP4024 series are from Advanced Power innovated desig
0.22. Size:223K ape
ap4028em.pdf 

AP4028EMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 9mD Low On-resistance ID 12.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4028 series are from Advanced Power innovated design andGsilicon process technology
0.23. Size:164K ape
ap4028gemt.pdf 

AP4028GEMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 9m Low On-resistance ID 41.6AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4028 series are from Advanced Power innovated design andsilicon process technology to achiev
0.24. Size:149K ape
ap4028ejb.pdf 

AP4028EJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 9mG Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-FreeSDescriptionAP4028 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possi
0.25. Size:122K ape
ap4028eyt.pdf 

AP4028EYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 14.5AGS DDDescriptionDDAP4028 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resist
0.26. Size:618K huashuo
hsp4024a.pdf 

HSP4024A N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSP4024A is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 3.3 m converter applications. ID 165 A The HSP4024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
0.27. Size:850K cn vbsemi
dmp4025lsd.pdf 

DMP4025LSDwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18
0.28. Size:266K inchange semiconductor
dmp4025lk3.pdf 

isc P-Channel MOSFET Transistor DMP4025LK3FEATURESDrain Current I = -8.6A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
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History: DK53D
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