Биполярный транзистор P402 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: P402
Тип материала: Ge
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 10 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 75 °C
Граничная частота коэффициента передачи тока (ft): 60 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 16
P402 Datasheet (PDF)
mp4020.pdf
MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4020 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T
mp4024.pdf
MP4024 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4024 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) Built-in resistance (R ). B Surge voltage is clamped by zener diode (C-B).
mp4025 .pdf
MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4025 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B).
mp4021.pdf
MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4021 Industrial Applications High Power Switching Applications. Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) : P = 4 W (Ta = 25C) T
mp4025.pdf
MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) MP4025 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pin) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B). Low
mp4024 .pdf
MP4024 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type Four Darlington Power Transistors in One) MP4024 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B).
mp4021 .pdf
MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4021 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)
mp4020 .pdf
MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Fourd Darlington Power tTransistors in One) MP4020 Industrial Applications High Power Switching Applications Unit: mmHammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C)
fp402.pdf
Ordering number:ENN5048N-Channel MOS Silicon FETFP402Ultrahigh-Speed Switching ApplicaitonsFeatures Package Dimensions Low ON resistance.unit:mm Very high-speed switching.2102A Complex type with 2 low-voltage-drive N-channel[FP402]MOSFETs facilitating high-density mounting.4.53.42.81.5Electrical Connection 0.5 1.8 0.50.46 71.07 6 1:Gate2:Drain
fdp4020p fdb4020p.pdf
September 2000FDP4020P/FDB4020PP-Channel 2.5V Specified Enhancement Mode Field Effect TransistorGeneral DescriptionFeatures -16 A, -20 V. RDS(on) = 0.08 @ VGS = -4.5 VThis P-Channel low threshold MOSFET has beenRDS(on) = 0.11 @ VGS = -2.5 V.designed for use as a linear pass element for low voltageoutputs. In addition, the part may be used as a low voltage Criti
bup402.pdf
BUP 402IGBTPreliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche ratedPin 1 Pin 2 Pin 3G C EType VCE IC Package Ordering CodeBUP 402 600V 36A TO-220 AB C67078-A4405-A2Maximum RatingsParameter Symbol Values UnitCollector-emitter voltage VCE 600 VEmitter-collector voltage VECCollector-gate voltage VC
dmp4025lsd.pdf
A Product Line ofDiodes IncorporatedDMP4025LSD40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max (A) Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25C Fast switching speed Minimizes switching losses 25m @ VGS = -10V -7.6 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -40V 45m @
dmp4025sfg.pdf
A Product Line ofDiodes IncorporatedDMP4025SFG40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25C Fast switching speed Minimizes switching losses (Notes 6) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 25m @ VGS = -10V - 7.2A -40V Hal
dmp4025lss.pdf
A Product Line ofDiodes IncorporatedDMP4025LSS 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(on) Minimizes conduction losses ID max (A) Fast switching speed Minimizes switching losses V(BR)DSS RDS(on) max TA = 25C Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) (Notes 6) Halogen and Antimony Free. Gr
dmp4025lk3.pdf
DMP4025LK340V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID max BVDSS RDS(on) max TA = +25C Fast Switching Speed (Note 6) Low Input/Output Leakage 25m @ VGS = -10V -8.6A Lead-Free Finish; RoHS compliant (Note 1 & 2) -40V 45m @ VGS = -4.5V -7.0A Halogen and Antimony Free. Green Device (Note 3) Quali
ap4024eyt.pdf
AP4024EYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 4.5m RoHS Compliant & Halogen-Free ID 20.7AGS DDDescriptionDDAP4024 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resi
ap4024em.pdf
AP4024EMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 4.5mD Low On-resistance ID 18.5AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4024E series are from Advanced Power innovated design andGsilicon process technol
ap4024gemt.pdf
AP4024GEMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 4.5mG Low On-resistance ID4 60A RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4024 series are from Advanced Power innovated design andsilicon process technology to achie
ap4028eh.pdf
AP4028EHHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-Free DescriptionAP4028 series are from Advanced Power innovated design and siliconGDprocess techno
ap4024ejb.pdf
AP4024EJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 6mG Fast Switching Characteristic ID 60A RoHS Compliant & Halogen-FreeSDescriptionAP4024 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possi
ap4024eh.pdf
AP4024EHHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 6mG Fast Switching Characteristic ID 60A RoHS Compliant & Halogen-FreeSDescriptionAP4024 series are from Advanced Power innovated desig
ap4028em.pdf
AP4028EMHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDDD Fast Switching Characteristic RDS(ON) 9mD Low On-resistance ID 12.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP4028 series are from Advanced Power innovated design andGsilicon process technology
ap4028gemt.pdf
AP4028GEMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 9m Low On-resistance ID 41.6AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4028 series are from Advanced Power innovated design andsilicon process technology to achiev
ap4028ejb.pdf
AP4028EJBHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VD Simple Drive Requirement RDS(ON) 9mG Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-FreeSDescriptionAP4028 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possi
ap4028eyt.pdf
AP4028EYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 14.5AGS DDDescriptionDDAP4028 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-resist
hsp4024a.pdf
HSP4024A N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSP4024A is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 3.3 m converter applications. ID 165 A The HSP4024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
dmp4025lsd.pdf
DMP4025LSDwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18
dmp4025lk3.pdf
isc P-Channel MOSFET Transistor DMP4025LK3FEATURESDrain Current I = -8.6A@ T =25D CDrain Source Voltage-: V = -40V(Min)DSSStatic Drain-Source On-Resistance: R = 25m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050