P402 datasheet, аналоги, основные параметры
Наименование производителя: P402 📄📄
Тип материала: Ge
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 10 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 10 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1 V
Макcимальный постоянный ток коллектора (Ic): 0.02 A
Предельная температура PN-перехода (Tj): 75 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 60 MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hFE): 16
📄📄 Копировать ⓘ
Аналоги (замена) для P402
- подборⓘ биполярного транзистора по параметрам
P402 даташит
0.1. Size:127K toshiba
mp4020.pdf 
MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4020 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) P = 4 W (Ta = 25 C) T
0.2. Size:104K toshiba
mp4024.pdf 
MP4024 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4024 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) Built-in resistance (R ). B Surge voltage is clamped by zener diode (C-B).
0.4. Size:127K toshiba
mp4021.pdf 
MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Darlington power transistor 4 in 1) MP4021 Industrial Applications High Power Switching Applications. Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching. Small package by full molding (SIP 10 pin) High collector power dissipation (4 devices operation) P = 4 W (Ta = 25 C) T
0.5. Size:85K toshiba
mp4025.pdf 
MP4025 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (darlington power transistor 4 in 1) MP4025 Industrial Applications High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pin) Built-in resistance (RB). Surge voltage is clamped by zener diode (C-B). Low
0.7. Size:165K toshiba
mp4021 .pdf 
MP4021 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Four Darlington Power Transistors in One) MP4021 Industrial Applications High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) PT = 4 W (Ta = 25 C)
0.8. Size:166K toshiba
mp4020 .pdf 
MP4020 TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type (Fourd Darlington Power tTransistors in One) MP4020 Industrial Applications High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive and Inductive Load Switching Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) PT = 4 W (Ta = 25 C)
0.9. Size:43K sanyo
fp402.pdf 
Ordering number ENN5048 N-Channel MOS Silicon FET FP402 Ultrahigh-Speed Switching Applicaitons Features Package Dimensions Low ON resistance. unit mm Very high-speed switching. 2102A Complex type with 2 low-voltage-drive N-channel [FP402] MOSFETs facilitating high-density mounting. 4.5 3.4 2.8 1.5 Electrical Connection 0.5 1.8 0.5 0.4 6 7 1.0 7 6 1 Gate 2 Drain
0.10. Size:78K fairchild semi
fdp4020p fdb4020p.pdf 
September 2000 FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features -16 A, -20 V. RDS(on) = 0.08 @ VGS = -4.5 V This P-Channel low threshold MOSFET has been RDS(on) = 0.11 @ VGS = -2.5 V. designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage Criti
0.11. Size:87K siemens
bup402.pdf 
BUP 402 IGBT Preliminary data Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated Pin 1 Pin 2 Pin 3 G C E Type VCE IC Package Ordering Code BUP 402 600V 36A TO-220 AB C67078-A4405-A2 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VCE 600 V Emitter-collector voltage VEC Collector-gate voltage VC
0.12. Size:286K diodes
dmp4025lsd.pdf 
A Product Line of Diodes Incorporated DMP4025LSD 40V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max (A) Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25 C Fast switching speed Minimizes switching losses 25m @ VGS = -10V -7.6 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) -40V 45m @
0.13. Size:263K diodes
dmp4025sfg.pdf 
A Product Line of Diodes Incorporated DMP4025SFG 40V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID max Low RDS(on) Minimizes conduction losses V(BR)DSS RDS(on) max TA = +25 C Fast switching speed Minimizes switching losses (Notes 6) Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 25m @ VGS = -10V - 7.2A -40V Hal
0.14. Size:187K diodes
dmp4025lss.pdf 
A Product Line of Diodes Incorporated DMP4025LSS 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low RDS(on) Minimizes conduction losses ID max (A) Fast switching speed Minimizes switching losses V(BR)DSS RDS(on) max TA = 25 C Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) (Notes 6) Halogen and Antimony Free. Gr
0.15. Size:254K diodes
dmp4025lk3.pdf 
DMP4025LK3 40V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID max BVDSS RDS(on) max TA = +25 C Fast Switching Speed (Note 6) Low Input/Output Leakage 25m @ VGS = -10V -8.6A Lead-Free Finish; RoHS compliant (Note 1 & 2) -40V 45m @ VGS = -4.5V -7.0A Halogen and Antimony Free. Green Device (Note 3) Quali
0.16. Size:143K ape
ap4024eyt.pdf 
AP4024EYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 4.5m RoHS Compliant & Halogen-Free ID 20.7A G S D D Description D D AP4024 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi
0.17. Size:186K ape
ap4024em.pdf 
AP4024EM Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 4.5m D Low On-resistance ID 18.5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4024E series are from Advanced Power innovated design and G silicon process technol
0.18. Size:165K ape
ap4024gemt.pdf 
AP4024GEMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D SO-8 Compatible with Heatsink RDS(ON) 4.5m G Low On-resistance ID4 60A RoHS Compliant & Halogen-Free D S D D Description D AP4024 series are from Advanced Power innovated design and silicon process technology to achie
0.19. Size:69K ape
ap4024gemt-hf.pdf 
AP4024GEMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D SO-8 Compatible with Heatsink RDS(ON) 4.5m G Low On-resistance ID4 60A RoHS Compliant & Halogen-Free D S D D Description D AP4024 series are from Advanced Power innovated design and silicon process technology to achie
0.20. Size:251K ape
ap4028eh.pdf 
AP4028EH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V Simple Drive Requirement RDS(ON) 9m Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-Free Description AP4028 series are from Advanced Power innovated design and silicon G D process techno
0.21. Size:147K ape
ap4024ejb.pdf 
AP4024EJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D Simple Drive Requirement RDS(ON) 6m G Fast Switching Characteristic ID 60A RoHS Compliant & Halogen-Free S Description AP4024 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possi
0.22. Size:202K ape
ap4024eh.pdf 
AP4024EH Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D Simple Drive Requirement RDS(ON) 6m G Fast Switching Characteristic ID 60A RoHS Compliant & Halogen-Free S Description AP4024 series are from Advanced Power innovated desig
0.23. Size:223K ape
ap4028em.pdf 
AP4028EM Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 9m D Low On-resistance ID 12.8A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4028 series are from Advanced Power innovated design and G silicon process technology
0.24. Size:164K ape
ap4028gemt.pdf 
AP4028GEMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D SO-8 Compatible with Heatsink RDS(ON) 9m Low On-resistance ID 41.6A G RoHS Compliant & Halogen-Free D S D D Description D AP4028 series are from Advanced Power innovated design and silicon process technology to achiev
0.25. Size:149K ape
ap4028ejb.pdf 
AP4028EJB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D Simple Drive Requirement RDS(ON) 9m G Fast Switching Characteristic ID 45A RoHS Compliant & Halogen-Free S Description AP4028 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possi
0.26. Size:122K ape
ap4028eyt.pdf 
AP4028EYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 9m RoHS Compliant & Halogen-Free ID 14.5A G S D D Description D D AP4028 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resist
0.27. Size:618K huashuo
hsp4024a.pdf 
HSP4024A N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSP4024A is the high cell density trenched N- VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),max 3.3 m converter applications. ID 165 A The HSP4024A meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function re
0.28. Size:850K cn vbsemi
dmp4025lsd.pdf 
DMP4025LSD www.VBsemi.tw Dual P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET 0.021 at VGS = - 10 V - 9.5 100 % UIS Tested RoHS - 30 15 nC COMPLIANT 0.028 at VGS = - 4.5 V - 8.0 APPLICATIONS Load Switches - Notebook PCs - Desktop PCs SO-8 S1 S2 - Game Stations S1 1 D1 8
0.29. Size:266K inchange semiconductor
dmp4025lk3.pdf 
isc P-Channel MOSFET Transistor DMP4025LK3 FEATURES Drain Current I = -8.6A@ T =25 D C Drain Source Voltage- V = -40V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p
Другие транзисторы: P307, P307A, P307B, P307G, P307V, P308, P309, P401, 2SC5200, P403, P403A, P416, P416A, P416B, P417, P417A, P417B
