P605 Todos los transistores

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P605 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P605

Material: Ge

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 3 W

Tensión colector-base (Vcb): 45 V

Tensión emisor-base (Veb): 1 V

Corriente del colector DC máxima (Ic): 1.5 A

Temperatura operativa máxima (Tj): 75 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 45 MHz

Capacitancia de salida (Cc): 130 pF

Ganancia de corriente contínua (hfe): 20

Búsqueda de reemplazo de transistor bipolar P605

P605 Datasheet (PDF)

1.1. p605a_p606a.pdf Size:1177K _russia

P605

1.2. cep6056_ceb6056.pdf Size:629K _cet

P605
P605

CEP6056/CEB6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Paramet

1.3. aop605.pdf Size:579K _aosemi

P605
P605

AOP605 Complementary Enhancement Mode Field Effect Transistor General Description Features n-channel p-channel The AOP605/L uses advanced trench technology to VDS (V) = 30V -30V provide excellent RDS(ON) and low gate charge. The ID = 7.5A (VGS = 10V) -6.6A (VGS = -10V) complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. RDS(ON) AOP605 and

Otros transistores... P416A , P416B , P417 , P417A , P417B , P422 , P423 , P6009 , BC108 , P605A , P606 , P606A , P607 , P607A , P608 , P608A , P609 .

 


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