PL1051 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PL1051
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2
W
Tensión colector-base (Vcb): 15
V
Tensión colector-emisor (Vce): 10
V
Tensión emisor-base (Veb): 3
V
Corriente del colector DC máxima (Ic): 0.02
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 1000
MHz
Capacitancia de salida (Cc): 1.5
pF
Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta:
TO72
Búsqueda de reemplazo de PL1051
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Selección ⓘ de transistores por parámetros
PL1051 datasheet
9.1. Size:1239K jiejie micro
jmpl1050pu.pdf 
-100V, -17A, 51m P-channel Power Planar MOSFET JMPL1050PU Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -100 V 100% Vds Tested VGS(th)_Typ -1.7 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -17 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 39 mW RDS(ON)_Typ(@VGS=-4.5V 51 mW Applications Load Switch
9.2. Size:356K jiejie micro
jmpl1050ak.pdf
JMPL1050AK -100V 37m P-Ch Power MOSFET Product Summary Features Parameter Value Unit Low On-Resistance VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -30 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V) 37 m RDS(ON)_Typ (@ VGS = -4.5V) 50 m 100% UIS Tested, 100%
9.3. Size:376K jiejie micro
jmpl1050ap.pdf
JMPL1050AP -100V 39m P-Ch Power MOSFET Features Product Summary Parameter Value Unit Low On-Resistance VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -6.3 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V) 39 m RDS(ON)_Typ (@ VGS = -4.5V) 57 m 100% UIS Tested, 100%
9.4. Size:1355K jiejie micro
jmpl1050pg.pdf
-100V, -28A, 51m P-channel Power Planar MOSFET JMPL1050PG Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -100 V 100% Vds Tested VGS(th)_Typ -1.7 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -28 A RDS(ON)_Typ(@VGS=-10V 37 mW Applications RDS(ON)_Typ(@VGS=-4.5V 51 mW Load Switch PWM Application
9.5. Size:348K jiejie micro
jmpl1050akq.pdf
JMPL1050AKQ -100V 37m P-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V 100% UIS and Rg Tested ID (@ VGS = -10V) (1) -36 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = -10V) 37 m RDS(ON)_Typ (@ VGS = -4.5V) 50 m Halogen-free and RoHS-
9.6. Size:365K jiejie micro
jmpl1050apd.pdf
JMPL1050APD -100V 39m Dual P-Ch Power MOSFET Features Product Summary Parameter Value Unit Low On-Resistance VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -6.6 A RDS(ON)_Typ (@ VGS = -10V) 39 RoHS and Halogen-Free Compliant m RDS(ON)_Typ (@ VGS = -4.5V) 57 m 100% UIS Tes
9.7. Size:1311K jiejie micro
jmpl1050pk.pdf
-100V, -22A, 60m P-channel Power Planar MOSFET JMPL1050PK Product Summary Features Excellent RDS(ON) and Low Gate Charge Parameters Value Unit 100% UIS Tested VDSS -100 V 100% Vds Tested VGS(th)_Typ -1.7 V Halogen-free; RoHS-compliant ID(@VGS=-10V) -22 A RDS(ON)_Typ(@VGS=-10V 48 mW Applications RDS(ON)_Typ(@VGS=-4.5V 60 mW Load Switch PWM Application
9.8. Size:402K jiejie micro
jmpl1050ag.pdf
JMPL1050AG -100V 36m P-Ch Power MOSFET Product Summary Features Parameter Value Unit Low On-Resistance VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -27 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V) 36 m RDS(ON)_Typ (@ VGS = -4.5V) 48 m 100% UIS Tested, 100%
9.9. Size:355K jiejie micro
jmpl1050ay.pdf
JMPL1050AY -100V 40m P-Ch Power MOSFET Features Product Summary Parameter Value Unit Low On-Resistance VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -10 A RDS(ON)_Typ (@ VGS = -10V) 40 RoHS and Halogen-Free Compliant m RDS(ON)_Typ (@ VGS = -4.5V) 53 m 100% UIS Tested, 100%
9.10. Size:278K jiejie micro
jmpl1050ae.pdf
JMPL1050AE -100V 36m P-Ch Power MOSFET Product Summary Features Parameter Value Unit Low On-Resistance VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -36 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V) 36 m RDS(ON)_Typ (@ VGS = -4.5V) 50 m 100% UIS Tested, 100%
9.11. Size:353K jiejie micro
jmpl1050auq.pdf
JMPL1050AUQ -100V 38m P-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V 100% UIS and Rg Tested ID (@ VGS = -10V) (1) -27 A RDS(ON)_Typ (@ VGS = -10V) 38 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = -4.5V) 51 m Halogen-free and RoH
9.12. Size:408K jiejie micro
jmpl1050agq.pdf
JMPL1050AGQ -100V 36m P-Ch Power MOSFET Features Product Summary Parameter Value Unit Low ON-resistance, RDS(ON) VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V 100% UIS and Rg Tested ID (@ VGS = -10V) (1) -30 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = -10V) 36 m RDS(ON)_Typ (@ VGS = -4.5V) 48 m Halogen-free and RoHS-
9.13. Size:376K jiejie micro
jmpl1050au.pdf
JMPL1050AU -100V 38m P-Ch Power MOSFET Features Product Summary Parameter Value Unit Low On-Resistance VDS -100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ -2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -26 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V) 38 m RDS(ON)_Typ (@ VGS = -4.5V) 51 m 100% UIS Tested, 100% R
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