PL1051 Datasheet and Replacement
Type Designator: PL1051
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.2
W
Maximum Collector-Base Voltage |Vcb|: 15
V
Maximum Collector-Emitter Voltage |Vce|: 10
V
Maximum Emitter-Base Voltage |Veb|: 3
V
Maximum Collector Current |Ic max|: 0.02
A
Max. Operating Junction Temperature (Tj): 200
°C
Transition Frequency (ft): 1000
MHz
Collector Capacitance (Cc): 1.5
pF
Forward Current Transfer Ratio (hFE), MIN: 25
Noise Figure, dB: -
Package:
TO72
-
BJT ⓘ Cross-Reference Search
PL1051 Datasheet (PDF)
9.1. Size:1239K jiejie micro
jmpl1050pu.pdf 
-100V, -17A, 51m P-channel Power Planar MOSFETJMPL1050PUProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParameters Value Unit 100% UIS TestedVDSS -100 V 100% Vds TestedVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -17 A Pb-free plating RDS(ON)_Typ(@VGS=-10V 39 mWRDS(ON)_Typ(@VGS=-4.5V 51 mWApplications Load Switch
9.2. Size:356K jiejie micro
jmpl1050ak.pdf
JMPL1050AK-100V 37m P-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -30 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V)37 m RDS(ON)_Typ (@ VGS = -4.5V)50 m 100% UIS Tested, 100%
9.3. Size:376K jiejie micro
jmpl1050ap.pdf
JMPL1050AP-100V 39m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -6.3 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V)39 m RDS(ON)_Typ (@ VGS = -4.5V)57 m 100% UIS Tested, 100%
9.4. Size:1355K jiejie micro
jmpl1050pg.pdf
-100V, -28A, 51m P-channel Power Planar MOSFETJMPL1050PGProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -100 V 100% Vds TestedVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -28 ARDS(ON)_Typ(@VGS=-10V 37 mWApplications RDS(ON)_Typ(@VGS=-4.5V 51 mW Load Switch PWM Application
9.5. Size:348K jiejie micro
jmpl1050akq.pdf
JMPL1050AKQ-100V 37m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V 100% UIS and Rg Tested ID (@ VGS = -10V) (1) -36 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = -10V)37 m RDS(ON)_Typ (@ VGS = -4.5V)50 m Halogen-free and RoHS-
9.6. Size:365K jiejie micro
jmpl1050apd.pdf
JMPL1050APD-100V 39mDual P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -6.6 A RDS(ON)_Typ (@ VGS = -10V)39 RoHS and Halogen-Free Compliant m RDS(ON)_Typ (@ VGS = -4.5V)57 m 100% UIS Tes
9.7. Size:1311K jiejie micro
jmpl1050pk.pdf
-100V, -22A, 60m P-channel Power Planar MOSFETJMPL1050PKProduct SummaryFeatures Excellent RDS(ON) and Low Gate ChargeParametersValue Unit 100% UIS TestedVDSS -100 V 100% Vds TestedVGS(th)_Typ -1.7 V Halogen-free; RoHS-compliantID(@VGS=-10V) -22 ARDS(ON)_Typ(@VGS=-10V 48 mWApplications RDS(ON)_Typ(@VGS=-4.5V 60 mW Load Switch PWM Application
9.8. Size:402K jiejie micro
jmpl1050ag.pdf
JMPL1050AG-100V 36m P-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -27 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V)36 m RDS(ON)_Typ (@ VGS = -4.5V)48 m 100% UIS Tested, 100%
9.9. Size:355K jiejie micro
jmpl1050ay.pdf
JMPL1050AY-100V 40m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -10 A RDS(ON)_Typ (@ VGS = -10V)40 RoHS and Halogen-Free Compliant m RDS(ON)_Typ (@ VGS = -4.5V)53 m 100% UIS Tested, 100%
9.10. Size:278K jiejie micro
jmpl1050ae.pdf
JMPL1050AE-100V 36m P-Ch Power MOSFETProduct SummaryFeaturesParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -36 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V)36 m RDS(ON)_Typ (@ VGS = -4.5V)50 m 100% UIS Tested, 100%
9.11. Size:353K jiejie micro
jmpl1050auq.pdf
JMPL1050AUQ-100V 38m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V 100% UIS and Rg Tested ID (@ VGS = -10V) (1) -27 A RDS(ON)_Typ (@ VGS = -10V)38 Pb-free Lead Plating m RDS(ON)_Typ (@ VGS = -4.5V)51 m Halogen-free and RoH
9.12. Size:408K jiejie micro
jmpl1050agq.pdf
JMPL1050AGQ-100V 36m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low ON-resistance, RDS(ON) VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V 100% UIS and Rg Tested ID (@ VGS = -10V) (1) -30 A Pb-free Lead Plating RDS(ON)_Typ (@ VGS = -10V)36 m RDS(ON)_Typ (@ VGS = -4.5V)48 m Halogen-free and RoHS-
9.13. Size:376K jiejie micro
jmpl1050au.pdf
JMPL1050AU-100V 38m P-Ch Power MOSFETFeatures Product SummaryParameter Value Unit Low On-Resistance VDS-100 V Excellent Gate Charge x RDS(ON) Product (FOM) VGS(th)_Typ-2.0 V Pb-Free Lead Plating ID (@ VGS = -10V) (1) -26 A RoHS and Halogen-Free Compliant RDS(ON)_Typ (@ VGS = -10V)38 m RDS(ON)_Typ (@ VGS = -4.5V)51 m 100% UIS Tested, 100% R
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Keywords - PL1051 transistor datasheet
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