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PMBTA06 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMBTA06
   Código: 1G_p1G_P1H_p1H_t1G_W1G
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.625 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO236
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PMBTA06 Datasheet (PDF)

 ..1. Size:47K  philips
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PMBTA06

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBTA06NPN general purpose transistor1999 Apr 29Product specificationSupersedes data of 1998 Jul 20Philips Semiconductors Product specificationNPN general purpose transistor PMBTA06FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 emitterAPPLICATIONS3 collecto

 ..2. Size:96K  philips
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PMBTA06

DISCRETE SEMICONDUCTORS DATA SHEETPMBTA06NPN general purpose transistorProduct data sheet 2004 Jan 22Supersedes data of 1999 Apr 29NXP Semiconductors Product data sheetNPN general purpose transistor PMBTA06FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 emitterAPPLICATIONS3 collector General purpose switching

 ..3. Size:270K  nxp
pmbta06.pdf pdf_icon

PMBTA06

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:96K  philips
pmbta44.pdf pdf_icon

PMBTA06

PMBTA44400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 22 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

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History: ZTX3708L | 2SD1103 | 3CA1203 | BF460EA | BU931ZP | 2SD1074 | ESM2894

 

 
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