PMBTA06 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMBTA06  📄📄 

Código: 1G_p1G_P1H_p1H_t1G_W1G

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.625 W

Tensión colector-base (Vcb): 80 V

Tensión colector-emisor (Vce): 80 V

Tensión emisor-base (Veb): 4 V

Corriente del colector DC máxima (Ic): 0.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 100 MHz

Ganancia de corriente contínua (hFE): 50

Encapsulados: TO236

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PMBTA06 datasheet

 ..1. Size:47K  philips
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PMBTA06

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA06 NPN general purpose transistor 1999 Apr 29 Product specification Supersedes data of 1998 Jul 20 Philips Semiconductors Product specification NPN general purpose transistor PMBTA06 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collecto

 ..2. Size:96K  philips
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PMBTA06

DISCRETE SEMICONDUCTORS DATA SHEET PMBTA06 NPN general purpose transistor Product data sheet 2004 Jan 22 Supersedes data of 1999 Apr 29 NXP Semiconductors Product data sheet NPN general purpose transistor PMBTA06 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching

 ..3. Size:270K  nxp
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PMBTA06

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:96K  philips
pmbta44.pdf pdf_icon

PMBTA06

PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

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