PMBTA06 Datasheet. Specs and Replacement

Type Designator: PMBTA06  📄📄 

SMD Transistor Code: 1G_p1G_P1H_p1H_t1G_W1G

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.625 W

Maximum Collector-Base Voltage |Vcb|: 80 V

Maximum Collector-Emitter Voltage |Vce|: 80 V

Maximum Emitter-Base Voltage |Veb|: 4 V

Maximum Collector Current |Ic max|: 0.5 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO236

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PMBTA06 datasheet

 ..1. Size:47K  philips

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PMBTA06

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA06 NPN general purpose transistor 1999 Apr 29 Product specification Supersedes data of 1998 Jul 20 Philips Semiconductors Product specification NPN general purpose transistor PMBTA06 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collecto... See More ⇒

 ..2. Size:96K  philips

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PMBTA06

DISCRETE SEMICONDUCTORS DATA SHEET PMBTA06 NPN general purpose transistor Product data sheet 2004 Jan 22 Supersedes data of 1999 Apr 29 NXP Semiconductors Product data sheet NPN general purpose transistor PMBTA06 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching ... See More ⇒

 ..3. Size:270K  nxp

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PMBTA06

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain... See More ⇒

 9.1. Size:96K  philips

pmbta44.pdf pdf_icon

PMBTA06

PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua... See More ⇒

Detailed specifications: PH5415, PH5416, PL1026, PL1051, PMBT3903, PMBT3904, PMBT3905, PMBTA05, NJW0281G, PMBTA13, PMBTA14, PMBTA42, PMBTA43, PMBTA55, PMBTA56, PMBTA63, PMBTA64

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