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PMBTA56 Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PMBTA56
   Código: 2G_P2G_p2G_p2G_t2G_W2G
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.33 W
   Tensión colector-base (Vcb): 80 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 4 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 100 MHz
   Capacitancia de salida (Cc): 12 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO236
 

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PMBTA56 datasheet

 ..1. Size:47K  philips
pmbta56 3.pdf pdf_icon

PMBTA56

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBTA56 PNP general purpose transistor 1999 Apr 09 Product specification Supersedes data of 1997 Apr 22 Philips Semiconductors Product specification PNP general purpose transistor PMBTA56 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collecto

 ..2. Size:96K  philips
pmbta56.pdf pdf_icon

PMBTA56

DISCRETE SEMICONDUCTORS DATA SHEET PMBTA56 PNP general purpose transistor Product data sheet 2004 Jan 09 Supersedes data of 1999 Apr 09 NXP Semiconductors Product data sheet PNP general purpose transistor PMBTA56 FEATURES PINNING High current (max. 500 mA) PIN DESCRIPTION Low voltage (max. 80 V). 1 base 2 emitter APPLICATIONS 3 collector General purpose switching

 ..3. Size:270K  nxp
pmbta56.pdf pdf_icon

PMBTA56

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:96K  philips
pmbta44.pdf pdf_icon

PMBTA56

PMBTA44 400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 22 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. 1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

Otros transistores... PMBT3905 , PMBTA05 , PMBTA06 , PMBTA13 , PMBTA14 , PMBTA42 , PMBTA43 , PMBTA55 , 2SA1015 , PMBTA63 , PMBTA64 , PMBTA92 , PMBTA93 , PMD10K100 , PMD10K40 , PMD10K60 , PMD10K80 .

 

 
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