All Transistors. PMBTA56 Datasheet

 

PMBTA56 Datasheet and Replacement


   Type Designator: PMBTA56
   SMD Transistor Code: 2G_P2G_p2G_p2G_t2G_W2G
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 0.33 W
   Maximum Collector-Base Voltage |Vcb|: 80 V
   Maximum Collector-Emitter Voltage |Vce|: 80 V
   Maximum Emitter-Base Voltage |Veb|: 4 V
   Maximum Collector Current |Ic max|: 0.5 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 100 MHz
   Collector Capacitance (Cc): 12 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: TO236
 

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PMBTA56 Datasheet (PDF)

 ..1. Size:47K  philips
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PMBTA56

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D088PMBTA56PNP general purpose transistor1999 Apr 09Product specificationSupersedes data of 1997 Apr 22Philips Semiconductors Product specificationPNP general purpose transistor PMBTA56FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 emitterAPPLICATIONS3 collecto

 ..2. Size:96K  philips
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PMBTA56

DISCRETE SEMICONDUCTORS DATA SHEETPMBTA56PNP general purpose transistorProduct data sheet 2004 Jan 09Supersedes data of 1999 Apr 09 NXP Semiconductors Product data sheetPNP general purpose transistor PMBTA56FEATURES PINNING High current (max. 500 mA)PIN DESCRIPTION Low voltage (max. 80 V).1 base2 emitterAPPLICATIONS3 collector General purpose switching

 ..3. Size:270K  nxp
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PMBTA56

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

 9.1. Size:96K  philips
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PMBTA56

PMBTA44400 V, 0.3 A NPN high-voltage low VCEsat (BISS) transistorRev. 01 22 February 2008 Product data sheet1. Product profile1.1 General descriptionNPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in aSOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.1.2 Features Low current (max. 300 mA) High voltage (max. 400 V) AEC-Q101 qua

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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