PMD10K100
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMD10K100
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150
W
Tensión colector-base (Vcb): 100
V
Tensión colector-emisor (Vce): 100
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 12
A
Temperatura operativa máxima (Tj): 150
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10000
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de transistor bipolar PMD10K100
PMD10K100
Datasheet (PDF)
..1. Size:199K inchange semiconductor
pmd10k100.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) Complement to type PMD11K100 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMET
8.1. Size:199K inchange semiconductor
pmd10k60.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type PMD11K60 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
8.2. Size:199K inchange semiconductor
pmd10k80.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to type PMD11K80 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
9.1. Size:1241K magnachip
mpmd100b120rh.pdf
MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss : VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Type Packa
9.2. Size:177K pmc components
pmd1047.pdf
PMD1047 NPN SILICON TRIPLE DIFFUSED PLANAR TRANSISTOR designed for 140V/12A AF 60W output application. complementary to PMB817. TO-3PI MAXIMUM RATINGS (Ta= 25 C) Characteristic Symbol Value UnitCollector Base Voltage VCBO 160 VCollector Emitter Voltage VCEO 140 VEmitter Base Voltage VEBO 6 VCollector Current IC 12 ACollector Current (Pulse) ICP 15 A 1 : Base
Otros transistores... 2SA1803O
, 2SA1803R
, 2SA1804
, 2SA1804O
, 2SA1804R
, 2SA1805
, 2SA1805O
, 2SA1805R
, TIP42
, 2SA181
, 2SA1810
, 2SA1810B
, 2SA1810C
, 2SA1811
, 2SA1815
, 2SA1815-3
, 2SA1815-4
.