Биполярный транзистор PMD10K100 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PMD10K100
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Статический коэффициент передачи тока (hfe): 10000
Корпус транзистора: TO3
Аналоги (замена) для PMD10K100
PMD10K100 Datasheet (PDF)
pmd10k100.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) Complement to type PMD11K100 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMET
pmd10k60.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type PMD11K60 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
pmd10k80.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to type PMD11K80 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
mpmd100b120rh.pdf
MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss : VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Type Packa
pmd1047.pdf
PMD1047 NPN SILICON TRIPLE DIFFUSED PLANAR TRANSISTOR designed for 140V/12A AF 60W output application. complementary to PMB817. TO-3PI MAXIMUM RATINGS (Ta= 25 C) Characteristic Symbol Value UnitCollector Base Voltage VCBO 160 VCollector Emitter Voltage VCEO 140 VEmitter Base Voltage VEBO 6 VCollector Current IC 12 ACollector Current (Pulse) ICP 15 A 1 : Base
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP31C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
