PMD10K40 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMD10K40

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 40 V

Tensión colector-emisor (Vce): 40 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10000

Encapsulados: TO3

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PMD10K40 datasheet

 8.1. Size:199K  inchange semiconductor
pmd10k60.pdf pdf_icon

PMD10K40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type PMD11K60 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER

 8.2. Size:199K  inchange semiconductor
pmd10k80.pdf pdf_icon

PMD10K40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to type PMD11K80 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER

 8.3. Size:199K  inchange semiconductor
pmd10k100.pdf pdf_icon

PMD10K40

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) Complement to type PMD11K100 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMET

Otros transistores... PMBTA43, PMBTA55, PMBTA56, PMBTA63, PMBTA64, PMBTA92, PMBTA93, PMD10K100, TIP142, PMD10K60, PMD10K80, PMD11K100, PMD11K40, PMD11K60, PMD11K80, PMD12K100, PMD12K40