PMD10K40 Datasheet and Replacement
Type Designator: PMD10K40
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 150 W
Maximum Collector-Base Voltage |Vcb|: 40 V
Maximum Collector-Emitter Voltage |Vce|: 40 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 12 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 10000
Noise Figure, dB: -
Package: TO3
PMD10K40 Substitution
PMD10K40 Datasheet (PDF)
pmd10k60.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type PMD11K60 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
pmd10k80.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to type PMD11K80 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
pmd10k100.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) Complement to type PMD11K100 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMET
Datasheet: 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , 8050 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
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