PMD10K60 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMD10K60

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 150 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 12 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10000

Encapsulados: TO3

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PMD10K60 datasheet

 ..1. Size:199K  inchange semiconductor
 pmd10k60.pdf pdf_icon

PMD10K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type PMD11K60 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER

 8.1. Size:199K  inchange semiconductor
 pmd10k80.pdf pdf_icon

PMD10K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to type PMD11K80 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER

 8.2. Size:199K  inchange semiconductor
 pmd10k100.pdf pdf_icon

PMD10K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) Complement to type PMD11K100 APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMET

 9.1. Size:1241K  magnachip
 mpmd100b120rh.pdf pdf_icon

PMD10K60

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Type Packa

MOSTRAR MÁS

Otros transistores... PMBTA55, PMBTA56, PMBTA63, PMBTA64, PMBTA92, PMBTA93, PMD10K100, PMD10K40, 2N2907, PMD10K80, PMD11K100, PMD11K40, PMD11K60, PMD11K80, PMD12K100, PMD12K40, PMD12K60