All Transistors. PMD10K60 Datasheet

 

PMD10K60 Datasheet and Replacement


   Type Designator: PMD10K60
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 150 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 12 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 10000
   Noise Figure, dB: -
   Package: TO3
 

 PMD10K60 Substitution

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PMD10K60 Datasheet (PDF)

 ..1. Size:199K  inchange semiconductor
 pmd10k60.pdf pdf_icon

PMD10K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 60V(Min) Complement to type PMD11K60 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER

 8.1. Size:199K  inchange semiconductor
 pmd10k80.pdf pdf_icon

PMD10K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 80V(Min) Complement to type PMD11K80 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER

 8.2. Size:199K  inchange semiconductor
 pmd10k100.pdf pdf_icon

PMD10K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD10K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= 100V(Min) Complement to type PMD11K100 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMET

 9.1. Size:1241K  magnachip
 mpmd100b120rh.pdf pdf_icon

PMD10K60

MPMD100B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChips IGBT Module 7DM-3 package BVCES= 1200V Low Conduction Loss : VCE(sat) = 2.7V (typ.) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated : Min. 10us at TC=100 Isolation Type Packa

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Datasheet: PMBTA55 , PMBTA56 , PMBTA63 , PMBTA64 , PMBTA92 , PMBTA93 , PMD10K100 , PMD10K40 , 2SC2482 , PMD10K80 , PMD11K100 , PMD11K40 , PMD11K60 , PMD11K80 , PMD12K100 , PMD12K40 , PMD12K60 .

Keywords - PMD10K60 transistor datasheet

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