PMD11K40 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PMD11K40
Material: Si
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 40 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 12 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 800
Paquete / Cubierta: TO3
Búsqueda de reemplazo de PMD11K40
PMD11K40 Datasheet (PDF)
pmd11k80.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD11K80 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -80V(Min) Complement to type PMD10K80 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
pmd11k100.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD11K100 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -100V(Min) Complement to type PMD10K100 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAME
pmd11k60.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Darlingtion Power Transistor PMD11K60 DESCRIPTION High DC current gain Collector-Emitter Sustaining Voltage- VCEO(SUS)= -60V(Min) Complement to type PMD10K60 APPLICATIONSDesigned for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25) SYMBOL PARAMETER
Otros transistores... PMBTA64 , PMBTA92 , PMBTA93 , PMD10K100 , PMD10K40 , PMD10K60 , PMD10K80 , PMD11K100 , TIP32C , PMD11K60 , PMD11K80 , PMD12K100 , PMD12K40 , PMD12K60 , PMD12K80 , PMD13K100 , PMD13K40 .
History: BD436G
History: BD436G



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