PMD12K100 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMD12K100  📄📄 

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 100 V

Tensión colector-emisor (Vce): 100 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 8 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10000

Encapsulados: TO3

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PMD12K100 datasheet

 ..1. Size:199K  inchange semiconductor
 pmd12k100.pdf pdf_icon

PMD12K100

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K100 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) Complement to type PMD13K100 APPLICATIONS Designed for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VALUE

 8.1. Size:198K  inchange semiconductor
 pmd12k80.pdf pdf_icon

PMD12K100

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K80 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD13K80 APPLICATIONS Designed for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VALUE UN

Otros transistores... PMD10K100, PMD10K40, PMD10K60, PMD10K80, PMD11K100, PMD11K40, PMD11K60, PMD11K80, MJE350, PMD12K40, PMD12K60, PMD12K80, PMD13K100, PMD13K40, PMD13K60, PMD13K80, PMD15K200