PMD12K100 PDF and Equivalents Search

 

PMD12K100 Specs and Replacement


   Type Designator: PMD12K100
   Material of Transistor: Si
   Polarity: NPN

Absolute Maximum Ratings


   Maximum Collector Power Dissipation (Pc): 100 W
   Maximum Collector-Base Voltage |Vcb|: 100 V
   Maximum Collector-Emitter Voltage |Vce|: 100 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 8 A
   Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics


   Forward Current Transfer Ratio (hFE), MIN: 10000
   Noise Figure, dB: -
   Package: TO3
 

 PMD12K100 Substitution

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PMD12K100 datasheet

 ..1. Size:199K  inchange semiconductor
 pmd12k100.pdf pdf_icon

PMD12K100

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K100 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) Complement to type PMD13K100 APPLICATIONS Designed for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VALUE... See More ⇒

 8.1. Size:198K  inchange semiconductor
 pmd12k80.pdf pdf_icon

PMD12K100

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD12K80 DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD13K80 APPLICATIONS Designed for general purpose amplifier and DC motor control applications. ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VALUE UN... See More ⇒

Detailed specifications: PMD10K100 , PMD10K40 , PMD10K60 , PMD10K80 , PMD11K100 , PMD11K40 , PMD11K60 , PMD11K80 , MJE350 , PMD12K40 , PMD12K60 , PMD12K80 , PMD13K100 , PMD13K40 , PMD13K60 , PMD13K80 , PMD15K200 .

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