PMD16K60 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PMD16K60

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 220 W

Tensión colector-base (Vcb): 60 V

Tensión colector-emisor (Vce): 60 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 20 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 10000

Encapsulados: TO3

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PMD16K60 datasheet

 ..1. Size:117K  inchange semiconductor
 pmd16k60 80 100.pdf pdf_icon

PMD16K60

Inchange Semiconductor Product Specification Silicon NPN Power Transistors PMD16K60/80/100 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS Designed for use in power switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYM

 9.1. Size:200K  inchange semiconductor
 pmd1601k.pdf pdf_icon

PMD16K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 60V(Min) Complement to type PMD1701K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VA

 9.2. Size:200K  inchange semiconductor
 pmd1602k.pdf pdf_icon

PMD16K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1602K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD1702K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VA

 9.3. Size:200K  inchange semiconductor
 pmd1603k.pdf pdf_icon

PMD16K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1603K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) Complement to type PMD1703K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER V

MOSTRAR MÁS

Otros transistores... PMD13K80, PMD15K200, PMD1600K, PMD1601K, PMD1602K, PMD1603K, PMD16K100, PMD16K40, 2N2222, PMD16K80, PMD1700K, PMD1701K, PMD1702K, PMD1703K, PMD17K100, PMD17K40, PMD17K60