PMD16K60 Specs and Replacement

Type Designator: PMD16K60

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 220 W

Maximum Collector-Base Voltage |Vcb|: 60 V

Maximum Collector-Emitter Voltage |Vce|: 60 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 20 A

Max. Operating Junction Temperature (Tj): 200 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 10000

Noise Figure, dB: -

Package: TO3

 PMD16K60 Substitution

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PMD16K60 datasheet

 ..1. Size:117K  inchange semiconductor

 pmd16k60 80 100.pdf pdf_icon

PMD16K60

Inchange Semiconductor Product Specification Silicon NPN Power Transistors PMD16K60/80/100 DESCRIPTION With TO-3 package High DC current gain DARLINGTON APPLICATIONS Designed for use in power switching application. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYM... See More ⇒

 9.1. Size:200K  inchange semiconductor

 pmd1601k.pdf pdf_icon

PMD16K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1601K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 60V(Min) Complement to type PMD1701K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VA... See More ⇒

 9.2. Size:200K  inchange semiconductor

 pmd1602k.pdf pdf_icon

PMD16K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1602K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) Complement to type PMD1702K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER VA... See More ⇒

 9.3. Size:200K  inchange semiconductor

 pmd1603k.pdf pdf_icon

PMD16K60

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlingtion Power Transistor PMD1603K DESCRIPTION High DC current gain Collector-Emitter Breakdown Voltage- V(BR)CEO= 100V(Min) Complement to type PMD1703K APPLICATIONS Designed for general purpose amplifier and low frequency switching applications ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER V... See More ⇒

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Detailed specifications: PMD13K80, PMD15K200, PMD1600K, PMD1601K, PMD1602K, PMD1603K, PMD16K100, PMD16K40, 2N2222, PMD16K80, PMD1700K, PMD1701K, PMD1702K, PMD1703K, PMD17K100, PMD17K40, PMD17K60

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